Datasheet
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 82N60P
Symbol Test Conditions Characteristic Values
(T
J
= 25° C, unless otherwise specified)
Min. Typ. Max.
g
fs
V
DS
= 20 V; I
D
= I
T
, Note 1 50 80 S
C
iss
23 nF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 1490 pF
C
rss
200 pF
t
d(on)
28 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
23 ns
t
d(off)
R
G
= 1 Ω (External) 79 ns
t
f
24 ns
Q
g(on)
240 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
96 nC
Q
gd
67 nC
R
thJC
0.12 ° C/W
R
thCS
0.13 ° C/W
Source-Drain Diode Characteristic Values
(T
J
= 25° C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
I
S
V
GS
= 0 V 82 A
I
SM
Repetitive 200 A
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1 1.5 V
t
rr
I
F
= 25A, -di/dt = 100 A/µs 200 ns
Q
RM
V
R
= 100V 0.6 µC
I
RM
6.0 A
Notes:
1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Current I
T
= 41A
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
SOT-227B Outline