Datasheet

IXFA10N80P IXFP10N80P
IXFQ10N80P IXFH10N80P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_10N80P(5J)8-18-09-A
Fig. 12. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - picoFarads
C
iss
C
oss
C
rss
f = 1MHz
Fig. 11. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 400V
I
D
= 5A
I
G
= 10mA
Fig. 8. Input Admittance
0
1
2
3
4
5
6
7
8
9
10
3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
G S
- Volts
I
D
- Amperes
T
J
= 125
º
C
25
º
C
- 40
º
C
Fig. 9. Transconductance
0
2
4
6
8
10
12
14
16
18
012345678910
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
º
C
25
º
C
125
º
C
Fig. 10. Source Current vs.
Source-To-Drain Voltage
0
3
6
9
12
15
18
21
24
27
30
0.40.50.60.70.80.91.01.1
V
S D
- Volts
I
S
- Amperes
T
J
= 125
º
C
T
J
= 25
º
C
Fig. 13. Maximum Transient Thermal
Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
( t h ) J C
-
º
C / W