Datasheet

© 2015 IXYS CORPORATION, All Rights Reserved
DS100311B(4/15)
IXFT60N50P3
IXFQ60N50P3
IXFH60N50P3
Polar3
TM
HiperFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25C to 150C 500 V
V
DGR
T
J
= 25C to 150C, R
GS
= 1M 500 V
V
GSS
Continuous  30 V
V
GSM
Transient  40 V
I
D25
T
C
= 25C 60 A
I
DM
T
C
= 25C, Pulse Width Limited by T
JM
150 A
I
A
T
C
= 25C30 A
E
AS
T
C
= 25C1 J
dv/dt I
S
 I
DM
, V
DD
 V
DSS
, T
J
 150°C 35 V/ns
P
D
T
C
= 25C 1040 W
T
J
-55 ... +150 C
T
JM
150 C
T
stg
-55 ... +150 C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
Plastic Body for 10s 260 °C
M
d
Mounting Torque (TO-247 & TO-3P) 1.13 / 10 Nm/lb.in
Weight TO-268 4.0 g
TO-3P 5.5 g
TO-247 6.0 g
V
DSS
= 500V
I
D25
= 60A
R
DS(on)



110m



Features

Fast Intrinsic Rectifier

Avalanche Rated

Low R
DS(ON)
and Q
G

Low Package Inductance
Advantages

High Power Density

Easy to Mount

Space Savings
Applications

Switch-Mode and Resonant-Mode
Power Supplies

DC-DC Converters

Laser Drivers

AC and DC Motor Drives

Robotics and Servo Controls
Symbol Test Conditions Characteristic Values
(T
J
= 25C Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 1mA 500 V
V
GS(th)
V
DS
= V
GS
, I
D
= 4mA 3.0 5.0 V
I
GSS
V
GS
= 30V, V
DS
= 0V 100 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 25 A
T
J
= 125C 2 mA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 110 m
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXFH)
G
S
D (Tab)
D
TO-268 (IXFT)
S
G
D (Tab)
TO-3P (IXFQ)
D
G
S
D (Tab)