Datasheet

© 2007 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
BV
CES
I
C
= 250μA, V
GE
= 0V 600 V
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
3.0 5.0 V
I
CES
V
CE
= V
CES,
V
GE
= 0V 50 μA
T
J
=125°C 1.0 mA
I
GES
V
CE
= 0V, V
GE
= ± 20V ±100 nA
V
CE(sat)
I
C
= 24A, V
GE
= 15V, Note 1 1.5 1.8 V
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 150°C 600 V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1MΩ 600 V
V
GES
Continuous ± 20 V
V
GEM
Transient ± 30 V
I
C25
T
C
= 25°C 66 A
I
C110
T
C
= 110°C 28 A
I
F110
T
C
= 110°C 10 A
I
CM
T
C
= 25°C, 1ms 150 A
SSOA V
GE
= 15V, T
VJ
= 125°C, R
G
= 10Ω I
CM
= 60 A
(RBSOA) Clamped inductive load @ ≤ 600V
P
C
T
C
= 25°C 190 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6mm (0.062 in.) from case for 10 seconds 300 °C
T
SOLD
Plastic body for 10 seconds 260 °C
M
d
Mounting torque (M3) 1.13/10 Nm/lb.in.
Weight 6 g
DS99906(09/07)
PolarHV
TM
IGBT
IXGH28N60B3D1 V
CES
= 600V
I
C110
= 28A
V
CE(sat)
≤ ≤
≤ ≤
≤ 1.8V
Features
z
Square RBSOA
z
High current handling capability
z
MOS Gate turn-on
- drive simplicity
Applications
z
PFC circuits
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
Advance Technical Information
G = Gate C = Collector
E = Emitter TAB = Collector
C (TAB)
G
C
E
TO-247 (IXGH)