Datasheet

© 2011 IXYS CORPORATION, All Rights Reserved
GenX3
TM
600V
IGBTs
Symbol Test Conditions Maximum Ratings
V
CES
T
C
= 25°C to 150°C 600 V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1MΩ 600 V
V
GES
Continuous ± 20 V
V
GEM
Transient ± 30 V
I
C25
T
C
= 25°C 60 A
I
C110
T
C
= 110°C 30 A
I
CM
T
C
= 25°C, 1ms 150 A
SSOA V
GE
= 15V, T
VJ
= 125°C, R
G
= 5Ω I
CM
= 60 A
(RBSOA) Clamped Inductive Load @ ≤ V
CES
P
C
T
C
= 25°C 220 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6mm (0.062 in.) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10 seconds 260 °C
M
d
Mounting Torque (TO-220 & TO-247) 1.13/10 Nm/lb.in.
Weight TO-220 2.5 g
TO-263 3.0 g
TO-263 3.0 g
DS100012B(05/11)
IXGA30N60C3
IXGP30N60C3
IXGH30N60C3
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
BV
CES
I
C
= 250μA, V
GE
= 0V 600 V
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
3.0 5.5 V
I
CES
V
CE
= V
CES
, V
GE
= 0V 15 μA
T
J
= 125°C 300 μA
I
GES
V
CE
= 0V, V
GE
= ± 20V ±100 nA
V
CE(sat)
I
C
= 20A, V
GE
= 15V, Note 1 2.6 3.0 V
T
J
= 125°C 1.8 V
V
CES
= 600V
I
C110
= 30A
V
CE(sat)
≤≤
≤≤
≤ 3.0V
t
fi(typ)
= 47ns
High-Speed PT IGBTs for
40-100kHz Switching
G = Gate D = Collector
S = Emitter Tab = Collector
TO-247 (IXGH)
G
E
C
C (Tab)
TO-263 AA (IXGA)
G
E
C (Tab)
G
C
E
TO-220AB (IXGP)
C (Tab)
Features

Optimized for Low Switching Losses

Square RBSOA

International Standard Packages
Advantages

High Power Density

Low Gate Drive Requirement
Applications

High Frequency Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

Lamp Ballasts