Datasheet

© 2011 IXYS CORPORATION, All Rights Reserved
DS100013B(05/11)
V
CES
= 600V
I
C110
= 30A
V
CE(sat)
≤≤
≤≤
≤ 3.0V
t
fi(typ)
= 47ns
GenX3
TM
600V IGBTs
w/ Diode
High-Speed PT IGBTs for
40-100 kHz Switching
IXGH30N60C3D1
IXGT30N60C3D1
Symbol Test Conditions Maximum Ratings
V
CES
T
C
= 25°C to 150°C 600 V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1MΩ 600 V
V
GES
Continuous ± 20 V
V
GEM
Transient ± 30 V
I
C25
T
C
= 25°C 60 A
I
C110
T
C
= 110°C 30 A
I
F110
T
C
= 110°C 30 A
I
CM
T
C
= 25°C, 1ms 150 A
SSOA V
GE
= 15V, T
VJ
= 125°C, R
G
= 5Ω I
CM
= 60 A
(RBSOA) Clamped Inductive Load @ ≤ V
CES
P
C
T
C
= 25°C 220 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6mm (0.062 in.) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10 seconds 260 °C
M
d
Mounting Torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-268 4 g
TO-247 6 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
3.0 5.5 V
I
CES
V
CE
= V
CES
, V
GE
= 0V 75 μA
T
J
= 125°C 1 mA
I
GES
V
CE
= 0V, V
GE
= ± 20V ±100 nA
V
CE(sat)
I
C
= 20A, V
GE
= 15V, Note 1 2.6 3.0 V
T
J
= 125°C 1.8 V
Features
z
Optimized for Low Switching Losses
z
Square RBSOA
z
Anti-Parallel Ultra Fast Diode
z
International Standard Packages
Advantages
z
High Power Density
z
Low Gate Drive Requirement
Applications
z
High Frequency Power Inverters
z
UPS
z
Motor Drives
z
SMPS
z
PFC Circuits
z
Battery Chargers
z
Welding Machines
z
Lamp Ballasts
G = Gate C = Collector
E = Emitter Tab = Collector
TO-247 (IXGH)
G
C
E
C (Tab)
TO-268 (IXGT)
E
G
C (Tab)