Datasheet
IXGH30N60C3D1
IXGT30N60C3D1
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 20A, V
CE
= 10V, Note 1 9 30 S
C
ies
915 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 78 pF
C
res
32 pF
Q
g
38 nC
Q
ge
I
C
= 20A, V
GE
= 15V, V
CE
= 0.5 • V
CES
8 nC
Q
gc
17 nC
t
d(on)
16 ns
t
ri
26 ns
E
on
0.27 mJ
t
d(off)
42 75 ns
t
fi
47 ns
E
off
0.09 0.18 mJ
t
d(on)
17 ns
t
ri
28 ns
E
on
0.44 mJ
t
d(off)
70 ns
t
fi
90 ns
E
off
0.33 mJ
R
thJC
0.56 °C/W
R
thCS
TO-247 0.21 °C/W
Inductive load, T
J
= 25°C
I
C
= 20A, V
GE
= 15V
V
CE
= 300V, R
G
= 5Ω
Note 2
Reverse Diode (FRED)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
V
F
I
F
= 30A, V
GE
= 0V, Note 1 2.7 V
T
J
= 150°C 1.6 V
I
RM
I
F
= 30A, V
GE
= 0V, -di
F
/dt = 100A/μs, T
J
= 100°C 4 A
t
rr
V
R
= 100V T
J
= 100°C 100 ns
I
F
= 1A, -di/dt = 100A/μs, V
R
= 30V 25 ns
R
thJC
0.9 °C/W
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Inductive load, T
J
= 125°C
I
C
= 20A, V
GE
= 15V
V
CE
= 300V, R
G
= 5Ω
Note 2
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals: 1 - Gate 2 - Collector
3 - Emitter
∅ P
TO-247 Outline
1 2 3
e
TO-268 Outline
Terminals: 1 - Gate 2,4 - Collector
3 - Emitter
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
CE
(Clamp), T
J
or R
G
.