Datasheet

© 2011 IXYS CORPORATION, All Rights Reserved
IXGH30N60C3D1
IXGT30N60C3D1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0.2
0.3
0.4
0.5
0.6
0.7
0.8
4 6 8 101214161820
R
G
- Ohms
E
off
- MilliJoules
0.2
0.4
0.6
0.8
1.0
1.2
1.4
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 300V
I
C
= 40A
I
C
= 20A
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
20
40
60
80
100
120
140
160
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
20
30
40
50
60
70
80
90
t
d
(
off
)
- Nanoseconds
t
fi
t
d(off)
- - - -
R
G
= 5 , V
GE
= 15V
V
CE
= 300V
I
C
= 40A, 20A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
80
100
120
140
160
180
4 6 8 101214161820
R
G
- Ohms
t
f i
- Nanoseconds
40
60
80
100
120
140
t
d
(
off
)
- Nanoseconds
t
fi
t
d(off)
- - - -
T
J
= 125ºC,
V
GE
= 15V
V
CE
= 300V
I
C
= 40A
I
C
= 20A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0
0.1
0.2
0.3
0.4
0.5
0.6
10 15 20 25 30 35 40
I
C
- Amperes
E
off
- MilliJoules
0
0.2
0.4
0.6
0.8
1
1.2
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 5

,
V
GE
= 15V
V
CE
= 300V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
0.2
0.4
0.6
0.8
1
1.2
1.4
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 5
,
V
GE
= 15V
V
CE
= 300V
I
C
= 40A
I
C
= 20A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
0
20
40
60
80
100
120
140
160
180
10 15 20 25 30 35 40
I
C
- Amperes
t
f i
- Nanoseconds
20
30
40
50
60
70
80
90
100
110
t
d
(
off
)
- Nanoseconds
t
fi
t
d(off)
- - - -
R
G
= 5 , V
GE
= 15V
V
CE
= 300V
T
J
= 125ºC
T
J
= 25ºC