Datasheet

© 2010 IXYS CORPORATION, All Rights Reserved
Linear
TM
Power
MOSFET w/ Extended
FBSOA
N-Channel Enhancement Mode
Avalanche Rated
V
DSS
= 1000V
I
D25
= 12A
R
DS(on)
1.3
ΩΩ
ΩΩ
Ω
DS99126B(04/10)
Features
International Standard Package
Designed for Linear Operation
Avalanche Rated
Molding Epoxy Meets UL94 V-0
Flammability Classification
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Programmable Loads
Current Regulators
DC-DC Converters
Battery Chargers
DC Choppers
Temperature and Lighting Controls
IXTH12N100L
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 250μA 1000 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250μA 3.5 5.5 V
I
GSS
V
GS
= ±30V, V
DS
= 0V ±100 nA
I
DSS
V
DS
= V
DSS
,
V
GS
= 0V 50 μA
T
J
= 125°C 500 μA
R
DS(on)
V
GS
= 20V, I
D
= 0.5 • I
DSS
, Note 1 1.3 Ω
G = Gate D = Drain
S = Source Tab = Drain
TO-247
G
S
Tab
D
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 1000 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 1000 V
V
GSS
Continuous ±30 V
V
GSM
Transient ±40 V
I
D25
T
C
= 25°C 12 A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
25 A
I
A
T
C
= 25°C 12 A
E
AS
T
C
= 25°C 1.5 J
P
D
T
C
= 25°C 400 W
T
J
-55...+150 ° C
T
JM
150 ° C
T
stg
-55...+150 ° C
T
L
1.6mm (0.063 in.) from Case for 10s 300 ° C
T
SOLD
Plastic Body for 10s 260 ° C
M
d
Mounting Torque 1.13/10 Nm/lb.in.
Weight 6 g

Summary of content (5 pages)