Datasheet
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH12N100L
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 20V, I
D
= 0.5 • I
DSS
, Note 1 3.0 5.0 S
C
iss
2500 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 300 pF
C
rss
95 pF
t
d(on)
30 ns
t
r
55 ns
t
d(off)
110 ns
t
f
65 ns
Q
g(on)
155 nC
Q
gs
V
GS
= 20V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
DSS
35 nC
Q
gd
55 nC
R
thJC
0.31 °C/W
R
thCS
0.21 °C/W
Safe-Operating-Area Specification
Symbol Test Conditions Characteristic Values
Min. Typ. Max.
SOA V
DS
= 800V, I
D
= 0.25A, T
C
= 60°C 200 W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 12 A
I
SM
Repetitive, Pulse Width Limited by T
JM
48 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.5 V
t
rr
1000 ns
Resistive Switching Times
V
GS
= 15V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
DSS
R
G
= 4.7Ω (External)
I
F
= I
S
, -di/dt = 100A/μs, V
R
=
100V, V
GS
= 0V
e
∅ P
TO-247 (IXTH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC