Datasheet

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH12N100L
Fig. 7. Input Admittance
0
2
4
6
8
10
12
14
16
3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
1
2
3
4
5
6
7
8
9
10
0246810121416
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
4
8
12
16
20
24
28
32
36
0.30.40.50.60.70.80.91.01.11.2
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
18
20
0 20406080100120140160
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 500V
I
D
= 6A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Maximum Transient Thermal Impedance
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Pulse Width - Seconds
Z
(th)JC
- ºC / W