Datasheet

IXTH20P50P
IXTT20P50P
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Admittance
-35
-30
-25
-20
-15
-10
-5
0
-6.0-5.5-5.0-4.5-4.0-3.5-3.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
-35-30-25-20-15-10-50
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
-60
-50
-40
-30
-20
-10
0
-3.5-3.0-2.5-2.0-1.5-1.0-0.5
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 102030405060708090100110
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= -250V
I
D
= - 10A
I
G
= -1mA
Fig. 11. Capacitance
10
100
1,000
10,000
-40-35-30-25-20-15-10-50
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1.0
10.0
100.0
10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100µs
R
DS(on)
Limit
-
-
--
100ms
-
-
1ms
10ms
-
DC