Datasheet

IXTK170P10P
IXTX170P10P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_170P10P(B9)03-25-09-C
Fig. 7. Input Admittance
-160
-140
-120
-100
-80
-60
-40
-20
0
-7.0-6.5-6.0-5.5-5.0-4.5-4.0-3.5-3.0
V
GS
- Volts
I
D
- Amperes
T
J
= - 40ºC
25ºC
125ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
-160-140-120-100-80-60-40-200
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
-300
-270
-240
-210
-180
-150
-120
-90
-60
-30
0
-4.5-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.5
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 20 40 60 80 100 120 140 160 180 200 220 240
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= - 50V
I
D
= - 85A
I
G
= -1mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
-40-35-30-25-20-15-10-50
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
110100
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs100µs
R
DS(on)
Limit
-
-
-
-
DC, 100ms
-
-
1ms
10ms
-