Datasheet

© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 175°C55V
V
DGR
T
J
= 25°C to 175°C, R
GS
= 1MΩ 55 V
V
GSS
Continuous ± 20 V
V
GSM
Transient ± 30 V
I
D25
T
C
= 25°C (Chip Capability) 550 A
I
L(RMS)
External Lead Current Limit 160 A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
1375 A
I
A
T
C
= 25°C 200 A
E
AS
T
C
= 25°C3J
P
D
T
C
= 25°C 1250 W
T
J
-55 ... +175 °C
T
JM
175 °C
T
stg
-55 ... +175 °C
T
L
1.6mm (0.062 in.) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10s 260 °C
M
d
Mounting Torque (TO-264) 1.13/10 Nm/lb.in.
F
C
Mounting Force (PLUS247) 20..120 /4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 250μA 55 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250μA 2.0 4.0 V
I
GSS
V
GS
= ± 20V, V
DS
= 0V ± 200 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 10 μA
T
J
= 150°C 1 mA
R
DS(on)
V
GS
= 10V, I
D
= 100A, Notes 1 & 2 1.6 mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXTK550N055T2
IXTX550N055T2
V
DSS
= 55V
I
D25
= 550A
R
DS(on)
≤≤
≤≤
≤
1.6m
ΩΩ
ΩΩ
Ω
DS100217(11/09)
Features
z
International Standard Packages
z
High Current Handling Capability
z
Fast Intrinsic Diode
z
Avalanche Rated
z
Low R
DS(on)
Advantages
z
Easy to Mount
z
Space Savings
z
High Power Density
Applications
z
DC-DC Converters and Off-Line UPS
z
Primary-Side Switch
z
High Speed Power Switching
Applications
TrenchT2
TM
GigaMOS
TM
Power MOSFET
Advance Technical Information
G = Gate D = Drain
S = Source Tab = Drain
PLUS247 (IXTX)
TO-264 (IXTK)
S
G
D
Tab
Tab
G
S
D