Datasheet

© 2009 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 1500 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 1500 V
V
GSS
Continuous ±30 V
V
GSM
Transient ±40 V
I
D25
T
C
= 25°C 7.5 A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
20 A
P
D
T
C
= 25°C 545 W
T
J
-55 to +150 °C
T
JM
150 °C
T
stg
-55 to +150 °C
V
ISOL
50/60 Hz, RMS, t = 1minute 2500 V~
I
ISOL
≤ 1mA, t = 1s 3000 V~
M
d
Mounting Torque for Base Plate 1.5/13 Nm/lb.in.
Terminal Connection Torque 1.3/11.5 Nm/lb.in.
Weight 30 g
G = Gate D = Drain
S = Source S = Source
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 1mA 1500 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250μA 5.0 8.0 V
I
GSS
V
GS
= ±30V, V
DS
= 0V ±200 nA
I
DSS
V
DS
= V
DSS
50 μA
V
GS
= 0V T
J
= 125°C 3 mA
R
DS(on)
V
GS
= 20V, I
D
= 4A, Note 1 3.6 Ω
Linear Power MOSFET
w/Extended FBSOA
IXTN8N150L
N-Channel Enhancement Mode
Guaranteed FBSOA
V
DSS
= 1500V
I
D25
= 7.5A
R
DS(on)
= 3.6
ΩΩ
ΩΩ
Ω
S
S
D
G
miniBLOC, SOT-227 B
E153432
G
D
S
S
DS99815A(2/09)
Preliminary Technical Information
Features
z
Designed for Linear Operations
z
International Standard Package
z
Molding Epoxies Meet UL94 V-0
Flammability Classification
z
Guaranteed FBSOA at 60ºC
z
miniBLOC with Aluminum Nitride
Isolation
z
Low R
DS(on)
HDMOS
TM
Process
z
Rugged Polysilicon Gate Cell
Structure
z
Low Package Inductance
Applications
z
Programmable Loads
z
Current Regulators
z
DC-DC Convertors
z
Battery Chargers
z
DC Choppers
z
Temperature and Lighting Controls
Advantages
z
Easy to Mount
z
Space Savings
z
High Power Density