Datasheet

IXYS reserves the right to change limits, test conditions, and dimensions.
IXTN8N150L
Fig. 7. Transconductance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
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I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
0
4
8
12
16
20
24
28
0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 9. Gate Charge
0
2
4
6
8
10
12
14
16
18
20
0 40 80 120 160 200 240 280 320
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 750V
I
D
= 4A
I
G
= 10mA
Fig. 10. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
IXYS REF: T_8N15L(8N)01-30-09
Fig. 11. Maximum Transient Thermal Impedance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W