Datasheet

IXTA 36N30P IXTP 36N30P
IXTQ 36N30P
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(T
J
= 25° C, unless otherwise specified)
Min. Typ. Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test 12 22 S
C
iss
2250 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 370 pF
C
rss
90 pF
t
d(on)
24 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
30 ns
t
d(off)
R
G
= 10 Ω (External) 97 ns
t
f
28 ns
Q
g(on)
70 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
17 nC
Q
gd
35 nC
R
thJC
0.42°C/W
R
thCS
(TO-3P) 0.21 °C/W
(TO-220) 0.25 °C/W
Source-Drain Diode Characteristic Values
(T
J
= 25° C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
I
S
V
GS
= 0 V 36 A
I
SM
Repetitive 90 A
V
SD
I
F
= I
S
, V
GS
= 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
I
F
= 25 A, -di/dt = 100 A/µs 250 ns
Q
RM
V
R
= 100 V, V
GS
= 0 V 2.0 µC
TO-3P (IXTQ) Outline
Pins: 1 - Gate 2 - Drain
TO-220 (IXTP) Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
TO-263 (IXTA) Outline