Datasheet

IXTA 36N30P IXTP 36N30P
IXTQ 36N30P
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 11. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - picoFarads
C
iss
C
oss
C
rss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 10203040506070
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 150V
I
D
= 18A
I
G
= 10mA
Fig. 7. Input Admittance
0
10
20
30
40
50
60
70
4.555.566.577.588.5
V
G S
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
-40ºC
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
0 102030405060708090
I
D
- Amperes
g
f s
- Siemens
T
J
= -40ºC
25ºC
125ºC
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
10
20
30
40
50
60
70
80
90
100
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
V
S D
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 12. Forw ard-Bias
Safe Operating Area
1
10
100
1000
10 100 1000
V
D S
- Volts
I
D
- Amperes
100µs
1ms
DC
T
J
= 150ºC
T
C
= 25ºC
R
DS( on)
Limit
10ms
25µs