Datasheet

© 2013 IXYS CORPORATION, All Rights Reserved
IXYH20N120C3D1
V
CES
= 1200V
I
C110
= 17A
V
CE(sat)





3.4V
t
fi(typ)
= 108ns
DS100485B(8/13)
G = Gate C = Collector
E = Emitter Tab = Collector
TO-247 AD
G
C
E
Tab
High-Speed IGBT
for 20-50 kHz Switching
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
BV
CES
I
C
= 250A, V
GE
= 0V 1200 V
V
GE(th)
I
C
= 250A, V
CE
= V
GE
3.0 5.0 V
I
CES
V
CE
= V
CES
, V
GE
= 0V 25 A
T
J
= 125C 350 μA
I
GES
V
CE
= 0V, V
GE
= 20V 100 nA
V
CE(sat)
I
C
= 20A, V
GE
= 15V, Note 1 3.4 V
T
J
= 150C 4.0 V
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 150°C 1200 V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1M 1200 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C 36 A
I
C110
T
C
= 110°C 17 A
I
F110
T
C
= 110°C 20 A
I
CM
T
C
= 25°C, 1ms 88 A
I
A
T
C
= 25°C 10 A
E
AS
T
C
= 25°C 400 mJ
SSOA V
GE
= 15V, T
VJ
= 150°C, R
G
= 10 I
CM
= 40 A
(RBSOA) Clamped Inductive Load @V
CE
 V
CES
P
C
T
C
= 25°C 230 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6 mm (0.062in.) from Case for 10s 260 °C
M
d
Mounting Torque 1.13/10 Nm/lb.in.
Weight 6g
1200V XPT
TM
IGBT
GenX3
TM
w/ Diode
Features

Optimized for Low Switching Losses

Square RBSOA

Positive Thermal Coefficient of
Vce(sat)

Anti-Parallel Ultra Fast Diode

Avalanche Rated

International Standard Package
Advantages

High Power Density

Low Gate Drive Requirement
Applications

High Frequency Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

Lamp Ballasts