Datasheet

© 2013 IXYS CORPORATION, All Rights Reserved
IXYJ20N120C3D1
V
CES
= 1200V
I
C110
= 9A
V
CE(sat)



3.4V
t
fi(typ)
= 108ns
DS100486B(8/13)
G = Gate C = Collector
E = Emitter
G
C
E
High-Speed IGBT
for 20-50 kHz Switching
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
BV
CES
I
C
= 250A, V
GE
= 0V 1200 V
V
GE(th)
I
C
= 250A, V
CE
= V
GE
3.0 5.0 V
I
CES
V
CE
= V
CES
,
V
GE
= 0V 25 A
T
J
= 125C 350 μA
I
GES
V
CE
= 0V, V
GE
= 20V 100 nA
V
CE(sat)
I
C
= 20A, V
GE
= 15V, Note 1 3.4 V
T
J
= 150C 4.0 V
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 150°C 1200 V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1M 1200 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C 21 A
I
C110
T
C
= 110°C 9 A
I
F110
T
C
= 110°C 15 A
I
CM
T
C
= 25°C, 1ms 84 A
I
A
T
C
= 25°C 10 A
E
AS
T
C
= 25°C 400 mJ
SSOA V
GE
= 15V, T
VJ
= 150°C, R
G
= 10 I
CM
= 40 A
(RBSOA) Clamped Inductive Load @V
CE
V
CES
P
C
T
C
= 25°C 105 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6 mm (0.062in.) from Case for 10s 260 °C
M
d
Mounting Torque 1.13/10 Nm/lb.in.
V
ISOL
50/60 Hz, RM, t = 1min 2500 V~
Weight 5 g
1200V XPT
TM
IGBT
GenX3
TM
w/ Diode
Features
Optimized for Low Switching Losses
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V~ Electrical Isolation
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
Anti-Parallel Ultra Fast Diode
Avalanche Rated
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
ISO TO-247
TM
E153432
Isolated Tab
(Electrically Isolated Tab)

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