Datasheet

© 2000 IXYS All rights reserved
D6 - 5
150 250 300
600 22
200 33
90
-40...+150
-40...+125
110
280
3000
3600
12.7
9.6
50
0.550
0.450
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
Dimensions in mm (1 mm = 0.0394")
Features
●
International standard package
with DCB ceramic base plate
●
Planar passivated chips
●
Short recovery time
●
Low switching losses
●
Soft recovery behaviour
●
Isolation voltage 3600 V~
●
UL registered E 72873
Applications
●
Antiparallel diode for high frequency
switching devices
●
Free wheeling diode in converters
and motor control circuits
●
Inductive heating and melting
●
Uninterruptible power supplies (UPS)
●
Ultrasonic cleaners and welders
Advantages
●
High reliability circuit operation
●
Low voltage peaks for reduced
protection circuits
●
Low noise switching
●
Low losses
Preliminary data
75 107
75 75
TBD
1200
1300
1080
1170
7200
7100
5800
5700
2.50-4/22-35
2.50-4/22-35
100 1.85
2.17
300 2.58
2.64
2
0.5
34
1.48
3.65
015
123 123 123
V
RSM
V
RRM
Type
V V MEA75-12 DA MEK 75-12 DA MEE 75-12 DA
1200 1200
Symbol Test Conditions Maximum Ratings
I
FRMS
T
case
= °CA
I
FAV
T
case
= °C; rectangular, d = 0.5 A
I
FRM
t
P
< 10 µs; rep. rating, pulse width limited by T
VJM
A
I
FSM
T
VJ
= 45°C; t = 10 ms (50 Hz), sine A
t = 8.3 ms (60 Hz), sine A
T
VJ
= 150°C; t = 10 ms (50 Hz), sine A
t = 8.3 ms (60 Hz), sine A
I
2
t T
VJ
= 45°C; t = 10 ms (50 Hz), sine A
2
s
t = 8.3 ms (60 Hz), sine A
2
s
T
VJ
= 150°C; t = 10 ms (50 Hz), sine A
2
s
t = 8.3 ms (60 Hz), sine A
2
s
T
VJ
°C
T
stg
°C
T
Hmax
°C
P
tot
T
case
= 25°CW
V
ISOL
50/60 Hz, RMS t = 1 min V~
I
ISOL
≤ 1 mA t = 1 s V~
M
d
Mounting torque (M5) Nm/lb.in.
Terminal connection torque (M5) Nm/lb.in.
d
S
Creep distance on surface mm
d
A
Strike distance through air mm
a Maximum allowable acceleration m/s
2
Weight g
Symbol Test Conditions Characteristic Values (per diode)
typ. max.
I
R
T
VJ
= 25°CV
R
= V
RRM
mA
T
VJ
= 25°CV
R
= 0.8 • V
RRM
mA
T
VJ
= 125°CV
R
= 0.8 • V
RRM
mA
V
F
I
F
= A; T
VJ
= 125°CV
T
VJ
=25°CV
I
F
= A; T
VJ
= 125°CV
T
VJ
=25°CV
V
T0
For power-loss calculations only V
r
T
mΩ
R
thJH
DC current K/W
R
thJC
DC current K/W
t
rr
I
F
= A T
VJ
= 100°Cns
I
RM
V
R
= V T
VJ
= 25°CA
-di/dt = A/µsT
VJ
= 100°CA
Fast Recovery
Epitaxial Diode
(FRED) Module
MEA 75-12 DA
MEK 75-12 DA
MEE 75-12 DA
V
RRM
= 1200 V
I
FAV
= 75 A
t
rr
= 250 ns
TO-240 AA
1
2
3