Datasheet

© 2000 IXYS All rights reserved
2 - 3
Symbol Test Conditions Characteristic Values
I
R
, I
D
V
R
= V
RRM
; V
D
= V
DRM
T
VJ
= T
VJM
£ 5mA
T
VJ
= 25°C £ 0.3 mA
V
T
, V
F
I
T
, I
F
= 45 A; T
VJ
= 25°C £ 1.6 V
V
T0
For power-loss calculations only (T
VJ
= 125°C) 0.9 V
r
T
15 mW
V
GT
V
D
= 6 V; T
VJ
= 25°C £ 1.0 V
T
VJ
= -40°C £ 1.2 V
I
GT
V
D
= 6 V; T
VJ
= 25°C £ 65 mA
T
VJ
= -40°C £ 80 mA
T
VJ
= 125°C £ 50 mA
V
GD
T
VJ
= T
VJM
;V
D
= 2/3 V
DRM
£ 0.2 V
I
GD
T
VJ
= T
VJM
;V
D
= 2/3 V
DRM
£ 5mA
I
L
I
G
= 0.3 A; t
G
= 30 ms; T
VJ
= 25°C £ 150 mA
di
G
/dt = 0.3 A/ms; T
VJ
= -40°C £ 200 mA
T
VJ
= 125°C £ 100 mA
I
H
T
VJ
= 25°C; V
D
= 6 V; R
GK
= ¥£100 mA
t
gd
T
VJ
= 25°C; V
D
= 1/2 V
DRM
£ 2 ms
I
G
= 0.3 A; di
G
/dt = 0.3 A/ms
t
q
T
VJ
= 125°C, I
T
= 15 A, t
P
= 300 ms, V
R
= 100 V typ. 150 ms
Q
r
di/dt = -10 A/ms, dv/dt = 20 V/ms, V
D
= 2/3 V
DRM
75 mC
R
thJC
per thyristor (diode); DC current 1.4 K/W
per module 0.35 K/W
R
thJK
per thyristor (diode); DC current 2.0 K/W
per module 0.5 K/W
d
S
Creepage distance on surface 12.6 mm
d
A
Creepage distance in air 6.3 mm
a Max. allowable acceleration 50 m/s
2
VHF 28
Fig. 1 Gate trigger range
Fig. 2 Gate controlled delay time t
gd
1 10 100 1000
0.1
1
10
I
G
V
G
mA
1: I
GT
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
V
4: P
GAV
= 0.5 W
5: P
GM
= 1 W
6: P
GM
= 10 W
I
GD
, T
VJ
= 125°C
4
2
1
5
6
10 100 1000
1
10
100
1000
µs
t
gd
T
VJ
= 25°C
typ.
Limit
mA
I
G
3
750