Data Sheet

Table Of Contents
SARA-R4/N4 series - Data Sheet
UBX-16024152 - R16 Electrical specifications Page 26 of 39
4.2.8 PWR_ON pin
Parameter
Min.
Typical
Max.
Unit
Remarks
Internal supply for
PWR_ON Input Signal
1.8
V
The PWR_ON input is pulled up to an internal voltage rail
minus a diode drop: the voltage value present at PWR_ON
input pin is normally 0.8 V typical.
Low-level input
-0.30
0.35
V
Pull-up resistance
150
200
250
k
Internal active pull-up
Input leakage current
-0.20
0.20
µA
PWR_ON low time
0.15
3.20
s
Low time to trigger module switch on from power off mode
0.15
3.20
s
Low time to trigger module wake-up from PSM deep sleep
1.50
s
Low time to trigger module switch off
Table 19: PWR_ON pin characteristics
4.2.9 RESET_N pin
Parameter
Min.
Typical
Max.
Unit
Remarks
Internal supply for
RESET_N Input Signal
1.8
V
Low-level input
-0.30
0.63
V
Pull-up resistance
37
k
Internal active pull-up
Input leakage current
-0.20
0.20
µA
RESET_N low time
10
s
Low time to trigger module switch off
Table 20: RESET_N pin characteristics
4.2.10 SIM pins
The SIM pins are a dedicated interface to the external SIM card/chip. The electrical characteristics
fulfill the regulatory specification requirements. The values in Table 21 are for information only.
Parameter
Min.
Typ.
Max.
Unit
Remarks
Low-level input
-0.30
0.2*VSIM
V
High-level input
0.7*VSIM
VSIM+0.3
V
Low-level output
0
0.4
V
Max value at I
OL
= +2.0 mA
High-level output
0.8*VSIM
VSIM
V
Max value at I
OL
= +2.0 mA
Internal pull-up resistor on SIM_IO
4.7
k
Internal pull-up to VSIM supply
Input leakage current
-2
2
µA
V
IN
=0 V or V
IN
=VSIM
Clock frequency on SIM_CLK
4.8
MHz
Table 21: SIM pin characteristics