Datasheet

SPEC NO: DSAA5211 REV NO: V.8 DATE: APR/29/2006 PAGE: 1 OF 3

APPROVED: J. Lu CHECKED: Allen Liu DRAWN: H.Q.YUAN

Package Dimensions

T-1 3/4 (5mm) INFRA-RED EMITTING DIODE

Features



MECHANICALLY AND SPECTRALLY MATCHED

TO THE PHOTOTRANSISTOR.



BLUE TRANSPARENT LENS .



RoHS COMPLIANT.

P/N: L-53F3BT

Description

F3 Made with Gallium Arsenide Infrared Emitting

diodes.

Notes:

1. All dimensions are in millimeters (inches).

2. Tolerance is ±0.25(0.01") unless otherwise noted.

3. Lead spacing is measured where the leads emerge from the package.

4. Specifications are subject to change without notice.

PAGE 1
T-1 3/4 (5mm) INFRA-RED EMITTING DIODE P/N: L-53F3BT Features Description MECHANICALLY AND SPECTRALLY MATCHED TO THE PHOTOTRANSISTOR. F3 Made with Gallium Arsenide Infrared Emitting diodes. BLUE TRANSPARENT LENS . RoHS COMPLIANT. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. Specifications are subject to change without notice.
PAGE 2
Selection Guide Part No. L-53F3BT Dice Po (mW/sr) [2] @ 20mA*50mA Lens Type GaAs Min. Typ. 4 20 *7 *30 BLUE TRANSPARENT Viewing Angle [1] 2θ θ1/2 30° Notes: 1.θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value. 2.* Luminous intensity with asterisk is measured at 50mA. Radiant intensity / luminous flux: +/-15%. Electrical / Optical Characteristics at TA=25°C Item P/N Symbol Typ. Max.
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L-53F3BT SPEC NO: DSAA5211 REV NO: V.8 DATE: APR/29/2006 APPROVED: J. Lu CHECKED: Allen Liu DRAWN: H.Q.