Datasheet

SPEC NO: DSAD6806 REV NO: V.4 DATE: AUG/30/2006 PAGE: 1 OF 2

APPROVED: J. Lu CHECKED: Allen Liu DRAWN: Z.Z.YANG

PHOTOTRANSISTOR

Package Dimensions

Part Number: L-53P3BT

Description

Made with NPN silicon phototransistor chips.

Features

zMECHANICALLY AND SPECTRALLY MATCHED TO

THE L-53 SERIES INFRARED EMITTING LED LAMP.

zBLUE TRANSPARENT LENS.

zRoHS COMPLIANT.

Notes:

1. All dimensions are in millimeters (inches).

2. Tolerance is ±0.25(0.01") unless otherwise noted.

3. Lead spacing is measured where the leads emerge from the package.

4. Specifications are subject to change without notice.

PAGE 1
PHOTOTRANSISTOR Part Number: L-53P3BT Features Description zMECHANICALLY AND SPECTRALLY MATCHED TO Made with NPN silicon phototransistor chips. THE L-53 SERIES INFRARED EMITTING LED LAMP. zBLUE TRANSPARENT LENS. zRoHS COMPLIANT. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. Specifications are subject to change without notice.
PAGE 2
Electrical / Optical Characteristics at TA=25°C Symbol Parameter Min. Typ. Max. Units Test Conditions VBR CEO Collector-to-Emitter Breakdown Voltage 30 - - V IC=100uA Ee=0mW/cm2 VBR ECO Emitter-to-Collector Breakdown Voltage 5 - - V IE=100uA Ee=0mW/cm2 VCE (SAT) Collector-to-Emitter Saturation Voltage - - 0.8 V IC=2mA Ee=20mW/cm2 Collector Dark Current - - 100 nA VCE=10V Ee=0mW/cm2 TR Rise Time (10％ to 90％ ) - 3 - us TF Fall Time (90％ to 10％ ) - 3 - us 0.7 3.