Datasheet

SPEC NO: DSAA4158 REV NO: V.4 DATE:MAR/06/2003 PAGE: 1 OF 2

APPROVED : J. Lu CHECKED : Allen Liu DRAWN: D.L.HUANG

Notes:

1. All dimensions are in millimeters (inches).

2. Tolerance is ±0.25(0.01") unless otherwise noted.

3. Lead spacing is measured where the lead emerge package.

4. Specifications are subject to change without notice.

Package Dimensions

PHOTOTRANSISTOR

L-53P3C

Features

!MECHANICALLY AND SPECTRALLY MATCHED TO

THE L-53 SERIES INFRARED EMITTING LED LAMP.

!WATER CLEAR LENS.

Description

Made with NPN silicon phototransistor chips.

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PHOTOTRANSISTOR L-53P3C Features !MECHANICALLY Description AND SPECTRALLY MATCHED TO Made with NPN silicon phototransistor chips. THE L-53 SERIES INFRARED EMITTING LED LAMP. !WATER CLEAR LENS. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice. SPEC NO: DSAA4158 APPROVED : J. Lu REV NO: V.
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Electrical / Optical Characteristics at T)=25°°C Sy m b o l Par am et er Min . Ty p . Max . Un it Tes t Co n d ic t io n V BR C EO Collector-to-Emitter Breakdown Voltage 30 - - V I C=100uA Ee=0mW/cm2 V BR EC O Emitter-to-Collector Breakdown Voltage 5 - - V I E=100uA Ee=0mW/cm2 VCE (SAT) Collector-to-Emitter Saturation Voltage - - 0.