Datasheet

SPEC NO: DSAB0908 REV NO:V.4 DATE:SEP/21/2006 PAGE: 1 OF 3

APPROVED: J. Lu CHECKED: Allen Liu DRAWN: F.ZHANG

Package Dimensions

Part Number: L-934F3BT

Description

F3 Made with Gallium Arsenide Infrared Emitting

diodes.

T-1 (3mm) INFRA-RED EMITTING DIODE

Features

z MECHANICALLY AND SPECTRALLY MATCHED

TO THE PHOTOTRANSISTOR.

z BLUE TRANSPARENT.

●RoHS COMPLIANT.

PRELIMINARY SPEC

Notes:

1. All dimensions are in millimeters (inches).

2. Tolerance is ±0.25(0.01") unless otherwise noted.

3. Lead spacing is measured where the leads emerge from the package.

4. Specifications are subject to change without notice.

PAGE 1
T-1 (3mm) INFRA-RED EMITTING DIODE PRELIMINARY SPEC Part Number: L-934F3BT Features Description z MECHANICALLY F3 Made with Gallium Arsenide Infrared Emitting diodes. AND SPECTRALLY MATCHED TO THE PHOTOTRANSISTOR. z BLUE TRANSPARENT. ●RoHS COMPLIANT. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4.
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Selection Guide Dice Part No. L-934F3BT Po(mW/sr) [2] @ 20mA*50mA Lens Type GaAs Viewing Angle [1] Min. Typ. 2θ1/2 7 28 50° *18 *70 50° BLUE TRANSPARENT Notes: 1.θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value. 2. * Luminous intensity with asterisk is measured at 50mA; Radiant Intensity/ luminous flux: +/-15%. Electrical / Optical Characteristics at TA=25°C Item P/N Symbol Typ. Max.
PAGE 3
L-934F3BT SPEC NO: DSAB0908 REV NO:V.4 DATE:SEP/21/2006 APPROVED: J. Lu CHECKED: Allen Liu DRAWN: F.