Datasheet

SPEC NO: DSAH7518 REV NO: V.1 DATE: SEP/10/2007 PAGE: 1 OF 2

APPROVED: WYNEC CHECKED: Allen Liu DRAWN: S.J.Liu ERP: 1101021823

PHOTOTRANSISTOR

Part Number: L-93DP3BT

Features

z MECHANICALLY AND SPECTRALLY MATCHED TO THE

INFRARED EMITTING LED LAMP.



BLUE TRANSPARENT LENS.

z RoHS COMPLIANT.

Description

Made with NPN silicon phototansistor chips.

Package Dimensions

Notes:

1. All dimensions are in millimeters (inches).

2. Tolerance is ±0.25(0.01") unless otherwise noted.

3. Lead spacing is measured where the leads emerge from the package.

4. Specifications are subject to change without notice.

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PHOTOTRANSISTOR Part Number: L-93DP3BT Features Description z MECHANICALLY AND SPECTRALLY MATCHED TO THE Made with NPN silicon phototansistor chips. INFRARED EMITTING LED LAMP. z BLUE TRANSPARENT LENS. z RoHS COMPLIANT. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. Specifications are subject to change without notice. SPEC NO: DSAH7518 REV NO: V.
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Electrical / Optical Characteristics at TA=25°C Symbol Parameter Min. VBR CEO Collector-to-Emitter Breakdown Voltage VBR ECO Emitter-to-Collector Breakdown Voltage VCE (SAT) Collector-to-Emitter Saturation Voltage Collector Dark Current I CEO Typ. Max. Units Test Conditions 30 V IC=100uA Ee=0mW/c ㎡ 5 V IE=100uA Ee=0mW/c ㎡ 0.8 V IC=2mA Ee=20mW/c ㎡ 100 nA VCE=10V Ee=0mW/c ㎡ TR Rise Time (10％ to 90％ ) 15 us TF Fall Time (90％ to 10％ ) 15 us 0.