Datasheet

KVR16LS11/4
4GB 1Rx8 512M x 64-Bit PC3L-12800
CL11 204-Pin SODIMM
DESCRIPTION
This document describes ValueRAM's 512M x 64-bit (4GB)
DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 1Rx8, low
voltage, memory module, based on eight 512M x 8-bit FBGA
components. The SPD is programmed to JEDEC standard
latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This
204-pin SODIMM uses gold contact fingers. The electrical and
mechanical specifications are as follows:
FEATURES
● JEDEC standard 1.35V (1.28V ~ 1.45V) and
1.5V (1.425V ~1.575V) Power Supply
● VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
● 800MHz fCK for 1600Mb/sec/pin
● 8 independent internal bank
● Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5
● Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
● 8-bit pre-fetch
● Burst Length: 8 (Interleave without any limit, sequential with starting
address “000” only), 4 with tCCD = 4 which does not allow seamless
read or write [either on the fly using A12 or MRS]
● Bi-directional Differential Data Strobe
● Internal(self) calibration : Internal self calibration through ZQ pin
(RZQ : 240 ohm ± 1%)
● On Die Termination using ODT pin
● Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at
85°C < TCASE ≤ 95°C
● Asynchronous Reset
● PCB: Height1.18” (30mm), double sided component
● Lead Free RoHS Compliant
Document No. VALUERAM1347-001.D00 12/23/16 Page 1
Memory Module Specifi cations
Continued >>
SPECIFICATIONS
selcyc 11)DDI(LC
Row Cycle Time (tRCmin) 48.125ns (min.)
Refresh to Active/Refresh 260ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 35ns (min.)
Maximum Operating Power (1.35V) = 2.376 W*
0 - V 49gnitaR LU
Operating Temperature 0
o
C to 85
o
C
Storage Temperature -55
o
C to +100
o
C
*Power will vary depending on the SDRAM.