Datasheet

- 1-
E L - 1 K L 3・E L - 1 K L 5
Infrared Emitting Diodes(GaAs)
K O D E N S H I
The EL-1KL3 and 1KL5 are high-power GaAs
IREDs mounted in durable, hermetically sealed
TO-18 metal can package, which provides years
of reliable performance even under demanding
conditions such as use outdoors.
F E A T U R E S
•Narrow beam angle
•D u r a b l e
•High reliability in demanding environments
A P P L I C A T I O N S
•Optical emitters
•Optical switches
•E n c o d e r s
•Smoke sensors
D I M E N S I O N S
(Unit : mm)
R a t i n gS y m b o lI t e m
MAXIMUM RATINGS
Reverse voltage
Forward current
Pulse forward current
* 1
Power dissipation
Operating temp.
Storage temp.
Soldering temp.
* 2
V
R
I
F
I
F P
P
C
T o p r .
T s t g .
T s o l .
5
1 0 0
1
1 7 0
- 4 0 ~ + 1 0 0
- 5 5 ~ + 1 2 5
2 6 0
V
m A
A
m W
℃
℃
℃
U n i t
( T a = 2 5℃)
*1. pulse width ：tw ≦100 μsec.period ：T = 1 0 m s e c .
*2. For MAX.5 seconds at the position of 2 mm from the package
1 . 7
1 0
Forward voltage
Reverse current
C a p a c i t a n c e
Radiant intensity
Peak emission wavelength
Spectral bandwidth 50%
Half angle
( T a = 2 5℃)
ELECTRO-OPTICAL CHARACTERISTICS
I
F
= 1 0 0 m A
V
R
= 5 V
f = 1 M H z
I
F
= 1 0 0 m A
I
F
= 1 0 0 m A
I
F
= 1 0 0 m A
I t e m
T y p . T y p .
V
F
I
R
C t
P
O
λp
Δλ
△θ
1 . 3 5
2 5
1 5
9 4 0
5 0
±8
1 . 3 5
2 5
1 0
9 4 0
5 0
±5
1 . 7
1 0
V
μA
p F
m W / s r
n m
n m
d e g .
S y m b o l
C o n d i t i o n s
M i n .
E L - 1 K L 3 E L - 1 K L 5
M i n .
M a x . M a x .
U n i t .
EL-1KL5EL-1KL3