Datasheet

- 1-
E L2 3 G
Infrared Emitting Diodes(GaAs)
K O D E N S H I
Forward voltage
Reverse current
C a p a c i t a n c e
Radiant intensity
Peak emission wavelength
Spectral bandwidth 50%
Half angle
The EL23G, a high-power GaAs IRED mounted in a
clear sidelooking package, is compact, low profile, and
easy to mount.
F E A T U R E S
•C o m p a c t
•Low profile package
•L o w - c o s t
•Sidelooking plastic package
A P P L I C A T I O N S
•P h o t o i n t e r r u p t e r s
•Optical switches
•T o y s
D I M E N S I O N S
(Unit : mm)
R a t i n gS y m b o lI t e m
MAXIMUM RATINGS
Reverse voltage
Forward current
Pulse forward current
* 1
Power dissipation
Operating temp.
Storage temp.
Soldering temp.
* 2
V
R
I
F
I
F P
P
D
T o p r .
T s t g .
T s o l .
5
6 0
1
1 0 0
- 2 0 ~ + 1 0 0
- 3 0 ~ + 1 0 0
2 4 0
V
m A
A
m W
℃
℃
℃
U n i t
( T a = 2 5℃)
( T a = 2 5℃)
ELECTRO-OPTICAL CHARACTERISTICS
I
F
= 6 0 m A
V
R
= 5 V
f = 1 M H z
I
F
= 6 0 m A
I
F
= 6 0 m A
I
F
= 6 0 m A
I t e m T y p .
1 . 3
2 5
2 . 0
9 4 0
5 0
±3 0
V
F
I
R
C t
P
O
λp
Δλ
△θ
1 . 6
1 0
V
μA
p F
m W / s r
n m
n m
d e g .
S y m b o l C o n d i t i o n s M i n . M a x . U n i t .
*1. pulse width ：tw ≦100 μsec.period ：T = 1 0 m s e c .
*2. For MAX.5 seconds at the position of 2 mm from the package