Datasheet

2008. 4. 16 1/3
SEMICONDUCTOR
TECHNICAL DATA
BC546/7/8
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 4
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
FEATURES
・High Voltage : BC546 V
CEO
=65V.
・For Complementary With PNP Type BC556/557/558.
MAXIMUM RATING (Ta=25℃)
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
AJ
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. COLLECTOR
2. BASE
3. EMITTER
+
_
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base
Voltage
BC546
V
CBO
80
VBC547 50
BC548 30
Collector-Emitter
Voltage
BC546
V
CEO
65
VBC547 45
BC548 30
Emitter-Base
Voltage
BC546
V
EBO
6
VBC547 6
BC548 5
Collector Current
BC546
I
C
100
mABC547 100
BC548 100
Base Current
BC546
I
B
20
mABC547 20
BC548 20
Emitter Current
BC546
I
E
-100
mABC547 -100
BC548 -100
Collector Power Dissipation
P
C
625 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃