User's Manual

M2US50NBT/M2SD50NBT
Hardware Integration Guide
Embedded Wireless Solutions Support Center:
http://ews-support.lairdtech.com
www.lairdtech.com/wireless
13
Laird
Americas: [phone]
Europe: [phone]
Hong Kong: [phone] x026
Feature
Description
Radio
The BT radio shares the single antenna port with the WLAN through an internal three-
way RF switch. The M2US50NBT/M2SD50NBT implements WLAN/BT coexistence
internally.
VDDIO is to set the I/O voltage internally with either 1.8 V or 3.3 V to ensure same
voltage level for the internal Wi-Fi and BT coexistence signal. Refer to the reference
design specifications for details.
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Table 4 summarizes the absolute maximum ratings and Table 5 lists the recommended operating conditions for
the M2US50NBT/M2SD50NBT. Absolute maximum ratings are those values beyond which damage to the device
can occur. Functional operation under these conditions, or at any other condition beyond those indicated in the
operational sections of this document, is not recommended.
Note: Maximum rating for signals follows the supply domain of the signals.
Table 4: Absolute Maximum Ratings
Symbol (Domain)
Parameter
Max Rating
Unit
VDDIO
WLAN host SDIO interface and BT I/O supply
-0.3 to 3.6
V
VCC3_3
External 3.3V power supply
-0.3 to 3.6
V
Storage
Storage Temperature
-40 to +85
°C
ANT1; ANT2
Maximum RF input (reference to 50-Ω input)
+10
dBm
ESD
Electrostatic discharge tolerance
2000
V
Recommended Operating Conditions
Table 5: Recommended Operating Conditions
Symbol (Domain)
Parameter
Min
Typ
Max
Unit
VDDIO
WLAN host interface and BT I/O supply
1.71/3.2
1.8/3.3
1.89/3.46
V
VCC3_3
External 3.3V power supply
3.2
3.30
3.46
V
T-ambient
Ambient temperature
-30
25
85
°C
DC Electrical Characteristics
Table 6 and Table 7 list the general DC electrical characteristics over recommended operating conditions (unless
otherwise specified).
Table 6: General DC Electrical Characteristics (For 3.3V I/O Operation)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIH
High Level Input Voltage
0.7 x VDD
V
VIL
Low Level Input Voltage
0.3 x
VDD
V