Technical Specification (TM03LNNATY1) 1/14
History Ver. Date 1.0 2020.09.
Contents 1. Product Introduction ...................................................................................................... 4 1.1 Environmental Specifications ............................................................................... 5 1.2 Electrical Specifications ....................................................................................... 5 1.2.1 Absolute Maximum and ESD Ratings ........................................................... 5 1.2.2 Current Consumption ............
1. Product Introuction The TM03LNNATY1 are designed for the automotive industry. They support LTE and WCDMA air Interface standards. The TM03LNNATY1 are based on the Qualcomm MDM9628 wireless chipsets and support the following bands. Table 1.
1.1 Environmental Specifications The environmental specification for operating and storage of the TM03LNNATY1 are defined in the the table below. Table 2. Environmental Specifications Parameter Temperature Range Operating Temperature -40℃ to 85℃ Storage Temperature -40℃ to +90℃ Humidity 95% or less 1.2 Electrical Specifications This section provides details for some of the key electrical specifications of the TM03LNNATY1 embedded modules. 1.2.
1.2.2 Current Consumption Table 4. TM03LNNATY1 Current Consumption (TBD) Mode Parameter Typical Max LTE Max TX Output /Full RB 600 650 Units mA WCDMA LTE Max TX Output /Full RB 600 650 Idle, Registered 3.6 4.0 mA mA WCDMA Idle, Registered 3.6 4.0 mA LTE Sleep Mode, Average Current 1.8 2.2 mA WCDMA Sleep Mode, Average Current 1.8 2.2 mA 1.3 Mechanical Specifications 1.3.
1.3.2 Mechanical Drawing 1.3.2.1 NAD PCB 40mm 34mm [TOP View_Without shield Can cover] [TOP View_With shield Can cover] 3.
2. RF Specification The specifications for the LTE and WCDMA interfaces are defined. TM03LNNATY1 is designed to be compliant with the standard shown in the table below. Table6. Standards Compliance Technology Standards LTE • 3GPP Release 8 WCDMA • 3GPP Release 9 2.1 LTE Specification 2.1.1 LTE RX Sensitivity The Receiver Sensitivity of the TM03LNNATY1 are specified in the following table. Table7.
Item Method (DL CH) Specification BAND2 BER(Bit Error Rate) BAND4 BER(Bit Error Rate) BAND5 BER(Bit Error Rate) Measure BER of Middle Channel (CH=9800) in Band2 0.1% @≤-106.7dBm Measure BER of Middle Channel (CH=1675) in Band4. 0.1% @≤-106.7dBm Measure BER of Middle Channel (CH=4400) in Band5 0.1% @≤-106.7dBm 3. NAD Module installation guide - TM03LNNATY0 Module is mounted with solder ball on the main TCU board.
[Figure 2. Trace Layout] [Figure 3. 50ohms calculatoin(mm) trace width : 0.55mm, Copper clearance : 0.
3.2 Design validation & production procedures To verify compliance of the reference trace, a coupon must be requested with every manufacturing panel form and for which the characteristics are described in the Gerber files. Part of these characteristic are shown in Figure 3. Then a network analyzer is used to measure the impedance of this coupon in order to validate the antenna trace. Note1. Measurement results delivered with boards. Controlled impedance shall be 50 Ohms +/- 15% on layer TOP 0.
[Figure 5. Placement] [Figure 6.
Notice This device complies with part 15 of the FCC Rules. Operation is subject to the following two conditions: (1) This device may not cause harmful interference, and (2) this device must accept any interference received, including interference that may cause undesired operation. This device complies with FCC radiation exposure limits set forth for an uncontrolled environment. This device should be installed and operated with minimum distance 20cm between the radiating element of this device and the user.
Host User Manual The host manual shall include the following regulatory statement; Part 15.19: This device complies with Part 15 of the FCC Rules. Operation is subject to the following two conditions: (1) This device may not cause harmful interference, and (2) this device must accept any interference received, including interference that may cause undesired operation.
