Datasheet

10
LT1008
1008fb
–
+
1
30pF
330pF
100pF2k
124k* 5.1k
1k
TEL. LABS
TYPE Q81
Q1A
2N2979
–15V OUTPUT
15V
10k*
15.7k
8
7
6
*1% FILM RESISTOR
LOW BIAS CURRENT AND OFFSET VOLTAGE OF THE LT1008
ALLOW 4.5 DECADES OF VOLTAGE INPUT LOGGING
6
2
15V
LT1004C
1.2V
3
2
INPUT
3
4
LT1008
Q1B
2N2979
–
+
LM107
Logarithmic Amplifier
–
+
LT1008
2
1008 TA04
3
R6
56M
6
OUTPUT
VOLTAGE GAIN ≈ 100
1
V
+
T
8
C1
30pF
R5
56M
R2
100k
R1
100k
S1
100k
R3
510k
R4
510k
T
S2
100k
–
+
1
1000pF
1.018235V
SATURATED
STANDARD
CELL #101
EPPLEY LABS
NEWPORT, R.I.
THE TYPICAL 30pA BIAS CURRENT OF THE LT1008 WILL
DEGRADE THE STANDARD CELL BY ONLY 1ppm/YEAR.
NOISE IS A FRACTION OF A ppm. UNPROTECTED GATE
MOSFET ISOLATES STANDARD CELL ON POWER DOWN
–15V
15V
OUTPUT
2N3609
R2
R1
1008 TA05
8
7
6
3
2
4
LT1008
+
Amplifier for Bridge Transducers Saturated Standard Cell Amplifier
TYPICAL APPLICATIO S
U
–
+
1000pF
10k
10k
30pF
8
1008 AI06
6
OUTPUT
*SOURCE RESISTANCE ≤15k FOR STABILITY
LT1008
2
INPUT*
3
Follower Feedforward Compensation
APPLICATIO S I FOR ATIO
WUUU
5V/DIV
5μs/DIV 1008 AI07