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LT1112/LT1114

ESCRIPTIO

Dual/Quad Low Power

Precision, Picoamp Input Op Amps

The LT1112 dual and LT1114 quad op amps achieve a new

standard in combining low cost and outstanding precision

specifications.

The performance of the selected prime grades matches or

exceeds competitive devices. In the design of the LT1112/

LT1114 however, particular emphasis has been placed on

optimizing performance in the low cost plastic and SO

packages. For example, the 75µV maximum offset voltage

in these low cost packages is the lowest on any dual or

quad non-chopper op amp.

The LT1112/LT1114 also provide a full set of matching

specifications, facilitating their use in such matching

dependent applications as two and three op amp instru-

mentation amplifiers.

Another set of specifications is furnished at ±1V supplies.

This, combined with the low 320µA supply current per

amplifier, allows the LT1112/LT1114 to be powered by

two nearly discharged AA cells.

■

S8 Package – Standard Pinout

■

Offset Voltage – Prime Grade: 60µV Max

■

Offset Voltage – Low Cost Grade

(Including Surface Mount Dual/Quad): 75µV Max

■

Offset Voltage Drift: 0.5µV/°C Max

■

Input Bias Current: 250pA Max

■

0.1Hz to 10Hz Noise: 0.3µV

P-P

, 2.2pA

P-P

■

Supply Current per Amplifier: 400µA Max

■

CMRR: 120dB Min

■

Voltage Gain: 1 Million Min

■

Guaranteed Specs with ±1.0V Supplies

■

Guaranteed Matching Specifications

■

LT1114 in Narrow Surface Mount Package

■

Picoampere/Microvolt Instrumentation

■

Two and Three Op Amp Instrumentation Amplifers

■

Thermocouple and Bridge Amplifiers

■

Low Frequency Active Filters

■

Photo Current Amplifiers

■

Battery-Powered Systems

Protected by U.S. Patents 4,575,685; 4,775,884 and 4,837,496

Distribution of Input Offset Voltage

(In All Packages)

INPUT OFFSET VOLTAGE (µV)

–70

PERCENT OF UNITS

–10 30

–50 –30

10 50 70

= ±15V

= 25°C

LT1112/14 • TA02

–

1/2 LT1112

–

1/2 LT1112

LT1004-1.2

75k

0.1%

46.4k

0.1%

0.765V

15k

2.000V

LT1112/14 • TA01

TOTAL SUPPLY CURRENT = 700µA

2V REFERENCE: SOURCES 1.7mA, SINKS 5mA 

OPTIONAL R

= 300Ω INCREASES SOURCE 

CURRENT TO 5mA

0.765V REFERENCE: SOURCES 5mA,

SINKS 0.5mA

TEMPERATURE COEFFICIENT LIMITED 

BY REFERENCE = 20ppm/°C

MINIMUM SUPPLY = 2.7V 



Dual Output, Buffered Reference (On Single 3V Supply)

Summary of content (13 pages)

PAGE 1
LT1112/LT1114 Dual/Quad Low Power Precision, Picoamp Input Op Amps U DESCRIPTIO FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ S8 Package – Standard Pinout Offset Voltage – Prime Grade: 60µV Max Offset Voltage – Low Cost Grade (Including Surface Mount Dual/Quad): 75µV Max Offset Voltage Drift: 0.5µV/°C Max Input Bias Current: 250pA Max 0.1Hz to 10Hz Noise: 0.3µVP-P, 2.2pAP-P Supply Current per Amplifier: 400µA Max CMRR: 120dB Min Voltage Gain: 1 Million Min Guaranteed Specs with ±1.
PAGE 2
LT1112/LT1114 W W W AXI U U ABSOLUTE RATI GS Supply Voltage ..................................................... ±20V Differential Input Current (Note 1) ..................... ±10mA Input Voltage (Equal to Supply Voltage) ............... ±20V Output Short-Circuit Duration ......................... Indefinite Storage Temperature Range ................ – 65°C to 150°C Lead Temperature (Soldering, 10 sec)................ 300°C Operating Temperature Range LT1112AM/LT1112M LT1114AM/LT1114M ..............
PAGE 3
LT1112/LT1114 ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER in VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted. CONDITIONS (Note 2) LT1112AM/AC LT1114AM/AC MIN TYP MAX LT1112M/C/S8 LT1114M/C/S MIN TYP MAX UNITS 16 14 nV/√Hz nV/√Hz Input Noise Voltage Density fO = 10Hz (Note 9) fO = 1000Hz (Note 9) 16 14 Input Noise Current 0.1Hz to 10Hz 2.2 2.2 Input Noise Current Density fO = 10Hz fO = 1000Hz 0.030 0.008 0.030 0.008 pA/√Hz pA/√Hz ±14.3 V ±13.5 28 18 ±14.3 ±13.
PAGE 4
LT1112/LT1114 ELECTRICAL CHARACTERISTICS VS = ±15V, – 55°C ≤ TA ≤ 125°C, unless otherwise noted. SYMBOL PARAMETER CONDITIONS (Note 2) VOUT Output Voltage Swing RL = 10kΩ SR Slew Rate ● IS Supply Current per Amplifier ● ∆VOS Offset Voltage Match (Note 5) Offset Voltage Match Drift (Notes 5, 8) ∆IB+ Noninverting Bias Current Match ∆CMRR ∆PSRR ● LT1112AMJ8 LT1114AMJ MIN TYP MAX LT1112MJ8 LT1114MJ MIN TYP MAX ±13.0 ±13.85 ±13.0 ±13.85 0.12 0.22 0.12 UNITS V 0.
PAGE 5
LT1112/LT1114 ELECTRICAL CHARACTERISTICS VS = ±15V, – 40°C ≤ TA ≤ 85°C, (Note 10) LT1112ACN8 LT1114ACN MIN TYP MAX LT1112N8/S8 LT1114CN/S MIN TYP MAX SYMBOL PARAMETER CONDITIONS (Note 2) VOS Input Offset Voltage LT1112N8 LT1112S8, LT1114N/S VS = ±1.2V ● ● ● 30 40 55 110 135 200 35 45 60 135 160 240 µV µV µV ∆VOS ∆Temp Average Input Offset Voltage Drift LT1112N8 LT1112S8, LT1114N/S ● ● 0.15 0.30 0.50 1.10 0.20 0.40 0.75 1.
PAGE 6
LT1112/LT1114 U W TYPICAL PERFOR A CE CHARACTERISTICS Input Bias Current Over Common-Mode Range IOS IB (UNDERCANCELLED) 0 IB (OVERCANCELLED) –100 30 VS = ±15V TA = 25°C RINCM = 800GΩ 50 VS = ±15V TA = 25°C DEVICE WITH POSITIVE INPUT CURRENT 0 DEVICE WITH NEGATIVE INPUT CURRENT –50 – IB –100 VS = ±15V –200 –75 –50 –25 0 25 50 75 TEMPERATURE (°C) 100 125 –150 –15 + 10 –5 0 5 –10 COMMON-MODE INPUT VOLTAGE (V) 0 0 100 200 –300 –200 –100 INPUT BIAS CURRENT (pA) 15 Distribution of Offset V
PAGE 7
LT1112/LT1114 U W TYPICAL PERFOR A CE CHARACTERISTICS Noise Spectrum 0.1Hz to 10Hz Noise 0.01Hz to 1Hz Noise VS = ±1V TO ±20V TA = 25°C CURRENT NOISE VOLTAGE NOISE 10 1/fCORNER 2.5Hz VS = ±15V TA = 25°C 1/fCORNER 140Hz NOISE VOLTAGE (0.2µV/DIV) 100 VS = ±15V TA = 25°C NOISE VOLTAGE (0.
PAGE 8
LT1112/LT1114 U W TYPICAL PERFOR A CE CHARACTERISTICS Voltage Gain 100 40 140 VS = ±15V TA = 25°C VS = ±15V TA = 25°C VS = ±15V TA = 25°C 120 120 –5 RL = 10k 0 RL = 2k 5 PHASE 80 GAIN (dB) VOLTAGE GAIN (dB) 30 100 60 40 20 140 20 GAIN 160 10 0 10 15 –15 –10 –5 0 5 OUTPUT VOLTAGE (V) 10 –20 0.01 0.1 15 1 –10 0.
PAGE 9
LT1112/LT1114 U W TYPICAL PERFOR A CE CHARACTERISTICS Small-Signal Transient Response Undistorted Output Voltage vs Frequency Large-Signal Transient Response PEAK-TO-PEAK OUTPUT VOLTAGE (V) 5V/DIV 20mV/DIV 28 50µs/DIV 2µs/DIV AV = +1 RF = 10k CF = 100pF VS = ±15V W U UO APPLICATI VS = ±15V 20 16 12 8 VS = ±5V 4 0 1 10 100 FREQUENCY (kHz) 1000 LT1112/14 • TPC30 U AV = +1 CL = 500pF VS = ±15V TA = 25°C RL = 10k 24 S I FOR ATIO The LT1112 dual and LT1114 quad in the plastic and ceramic DI
PAGE 10
LT1112/LT1114 U W U UO APPLICATI S I FOR ATIO 800mV of the supplies. The effect of input and output overdrive on the other amplifiers in the LT1112 or LT1114 packages is negligible, as each amplifier is biased independently. Input offset current = 100pA Input resistance = 800GΩ Input noise = 0.
PAGE 11
LT1112/LT1114 UO TYPICAL APPLICATI Dual Buffered ±0.617V Reference Powered by Two AA Batteries +1.5V RX* 15k *OPTIONAL + 1/2 LT1112 +0.617V – 20k 0.1% LT1004-1.2 TOTAL SUPPLY CURRENT = 700µA WORKS WITH BATTERIES DISCHARGED TO ±1.3V AT ±1.5V: MAXIMUM LOAD CURRENT = 800µA; CAN BE INCREASED WITH OPTIONAL RX, RY; AT RX = RY = 750Ω LOAD CURRENT = 2mA TEMPERATURE COEFFICIENT LIMITED BY REFERENCE = 20ppm/°C 100pF – 1/2 LT1112 + RY* 20k 0.1% *OPTIONAL –1.5V –0.
PAGE 12
LT1112/LT1114 U PACKAGE DESCRIPTIO Dimensions in inches (millimeters) unless otherwise noted. 0.290 – 0.320 (7.366 – 8.128) J8 Package 8-Lead Ceramic DIP 0.015 – 0.060 (0.381 – 1.524) 0.008 – 0.018 (0.203 – 0.460) 0.405 (10.287) MAX 0.005 (0.127) MIN 0.200 (5.080) MAX 8 0.025 (0.635) RAD TYP 0.220 – 0.310 (5.588 – 7.874) 1 0.038 – 0.068 (0.965 – 1.727) 0.300 – 0.320 (7.620 – 8.128) 0.045 – 0.065 (1.143 – 1.651) N8 Package 8-Lead Plastic DIP 3 +0.025 0.325 –0.015 8 7 6 5 0.250 ± 0.
PAGE 13
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