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LT1336

1336fa

Typical applicaTion

FeaTures DescripTion

Half-Bridge N-Channel

Power MOSFET Driver

with Boost Regulator

The LT

1336 is a cost effective half-bridge N-channel

power MOSFET driver. The floating driver can drive the

topside N-channel power MOSFETs operating off a high

voltage (HV) rail of up to 60V (absolute maximum). In

PWM operation an on-chip switching regulator maintains

charge in the bootstrap capacitor even when approaching

and operating at 100% duty cycle.

The internal logic prevents the inputs from turning on

the power MOSFETs in a half-bridge at the same time. Its

unique adaptive protection against shoot-through cur-

rents eliminates all matching requirements for the two

MOSFETs. This greatly eases the design of high efficiency

motor control and switching regulator systems.

During low supply or start-up conditions, the undervoltage

lockout actively pulls the driver outputs low to prevent

the power MOSFETs from being partially turned on. The

0.5V hysteresis allows reliable operation even with slowly

varying supplies.

L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear

Technology Corporation. All other trademarks are the property of their respective owners.

applicaTions

Floating Top Driver Switches Up to 60V

Internal Boost Regulator for DC Operation

180ns Transition Times Driving 10,000pF

Adaptive Nonoverlapping Gate Drives Prevent

Shoot-Through

Drives Gate of Top N-Channel MOSFET

Above Supply

Top Drive Maintained at High Duty Cycles

TTL/CMOS Input Levels

Undervoltage Lockout with Hysteresis

Operates at Supply Voltages from 10V to 15V

Separate Top and Bottom Drive Pins

PWM of High Current Inductive Loads

Half-Bridge and Full-Bridge Motor Control

Synchronous Step-Down Switching Regulators

3-Phase Brushless Motor Drive

High Current Transducer Drivers

Class D Power Amplifiers

UVOUT

INTOP

INBOTTOM

SWITCH

BOOST

TGATEDR

TGATEFB

TSOURCE

BGATEDR

BGATEFB

LT1336

SENSE

1N4148

200µH*

HV = 40V MAX**

BOOST

1µF

10µF

25V

12V

PWM

0Hz TO 100kHz

1336 TA01

IRFZ44

6 15 7

1000µF

100V

SGND PGNDSWGND

1N4148

SENSE

2Ω

1/4W

* SUMIDA RCR-664D-221KC

** FOR HV > 40V SEE “DERIVING THE FLOATING

SUPPLY WITH THE FLYBACK TOPOLOGY” IN

APPLICATIONS INFORMATION SECTION

INTOP INBOTTOM TGATEDR BGATEDR

L L L L

L H L H

H L H L

H H L L

Summary of content (20 pages)

PAGE 1
LT1336 Half-Bridge N-Channel Power MOSFET Driver with Boost Regulator Features n n n n n n n n n n Description Floating Top Driver Switches Up to 60V Internal Boost Regulator for DC Operation 180ns Transition Times Driving 10,000pF Adaptive Nonoverlapping Gate Drives Prevent Shoot-Through Drives Gate of Top N-Channel MOSFET Above Supply Top Drive Maintained at High Duty Cycles TTL/CMOS Input Levels Undervoltage Lockout with Hysteresis Operates at Supply Voltages from 10V to 15V Separate Top and Bottom D
PAGE 2
LT1336 Absolute Maximum Ratings (Note 1) Supply Voltage (Pins 2, 10)........................................20V Boost Voltage.............................................................75V Peak Output Currents (<10µs)................................... 1.5A Input Pin Voltages...............................–0.3V to V+ + 0.3V Top Source Voltage........................................ –5V to 60V Boost-to-Source Voltage (VBOOST – V TSOURCE).............................. –0.3V to 20V Switch Voltage (Pin 16)..
PAGE 3
LT1336 Electrical Characteristics The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. Test Circuit, V+ = VBOOST = 12V, VTSOURCE = 0V and Pins 1, 16 open. Gate Feedback pins connected to Gate Drive pins unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN TYP MAX IS DC Supply Current (Note 3) V + = 15V, VINTOP = 0.8V, VINBOTTOM = 2V V+ = 15V, VINTOP = 2V, VINBOTTOM = 0.8V V+ = 15V, VINTOP = 0.8V, VINBOTTOM = 0.
PAGE 4
LT1336 Electrical Characteristics The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. Test Circuit, V+ = VBOOST = 12V, VTSOURCE = 0V and Pins 1, 16 open. Gate Feedback pins connected to Gate Drive pins unless otherwise specified.
PAGE 5
LT1336 Typical Performance Characteristics DC + Dynamic Supply Current vs Input Frequency DC + Dynamic Supply Current vs Input Frequency SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) 40 V + = 20V 30 50% DUTY CYCLE V+ = 12V 50 V + = 15V 20 V + = 10V 12 11 40 CGATE = 10000pF 30 CGATE = 3000pF 20 1 10 100 INPUT FREQUENCY (kHz) 0 1000 1 2.
PAGE 6
LT1336 Typical Performance Characteristics 180 V + = 12V 280 TOP GATE RISE TIME (ns) 260 240 220 200 180 160 CLOAD = 3000pF 140 120 80 –50 –25 0 25 50 75 TEMPERATURE (C) 400 CLOAD = 10000pF 120 100 80 CLOAD = 3000pF 60 100 CLOAD = 1000pF 0 25 50 75 100 TEMPERATURE (C) 400 V + = 12V CLOAD = 3000pF 300 250 BOTTOM DRIVER 200 150 100 –50 400 350 BOTTOM DRIVER 250 200 150 –25 0 25 50 75 TEMPERATURE (C) 100 –25 0 25 50 75 TEMPERATURE (C) 100 1336 G15 11.5 0.
PAGE 7
LT1336 Pin Functions ISENSE (Pin 1): Boost Regulator ISENSE Comparator Input. An RSENSE placed between Pin 1 and V + sets the maximum peak current. Pin 1 can be left open if the boost regulator is not used. BGATEDR (Pin 9): Bottom Gate Drive. The high current drive point for the bottom MOSFET. When a gate resistor is used it is inserted between Pin 9 and the gate of the MOSFET. SV+ (Pin 2): Main Signal Supply. Must be closely decoupled to the signal ground Pin 6. PV + (Pin 10): Bottom Driver Supply.
PAGE 8
LT1336 Functional Diagram SV + ISENSE + 1 16 SWITCH – 15 SWGND 14 BOOST 6V 480mV TRIP = 10.6V TRIP = 8.7V SV + 2 TOP UV DETECT BIAS 13 TGATEDR – 3k 3 + INTOP 12 TGATEFB 5V 2.9V 11 TSOURCE INBOTTOM 4 10 PV + 3k 5V BOTTOM UV LOCK 5 SGND 6 PGND 7 BGATEFB 8 – UVOUT 9 BGATEDR + 2.
PAGE 9
LT1336 Test Circuit 1N4148 200µH* + V 2Ω + + V/I 1µF 1 2 3 3k 4 5 6 7 50Ω 50Ω 8 ISENSE SV + SWITCH LT1336 INTOP SWGND BOOST INBOTTOM TGATEDR UVOUT TGATEFB SGND TSOURCE 16 15 14 + 13 V/I + 12 3000pF BGATEDR 1µF V 11 + PV + 10 PGND BGATEFB V/I V 9 + 3000pF V * SUMIDA RCR-664D-221KC 1336 TC01 Timing Diagram 2V INTOP 0.8V 2V INBOTTOM 0.
PAGE 10
LT1336 Operation (Refer to Functional Diagram) The LT1336 incorporates two independent driver channels with separate inputs and outputs. The inputs are TTL/CMOS compatible; they can withstand input voltages as high as V +. The 1.4V input threshold is regulated and has 300mV of hysteresis. Both channels are noninverting drivers. The internal logic prevents both outputs from simultaneously turning on under any input conditions. When both inputs are high both outputs are actively held low.
PAGE 11
LT1336 Applications Information In applications where switching is always above 10kHz and the duty cycle never exceeds 90%, Pins 1, 15 and 16 can be left open. The bootstrap capacitor is then charged by conventional bootstrapping. Only a diode needs to be connected between V+ and the Boost pin. A 0.1µF bootstrap capacitor is usually adequate using this technique for driving a single MOSFET under 10,000pF.
PAGE 12
LT1336 Applications Information Using the components as shown in Figure 2 the flyback regulator will run at around 800kHz. To lower the frequency CFILTER can be increased and to increase the frequency CFILTER can be decreased. D1 1N4148 T1* 1000pF 24V CFILTER 0.1µF 6.
PAGE 13
LT1336 Applications Information Paralleling MOSFETs When the above calculations result in a lower RDS(ON) than is economically feasible with a single MOSFET, two or more MOSFETs can be paralleled. The MOSFETs will inherently share the currents according to their RDS(ON) ratio as long as they are thermally connected (e.g., on a common heat sink).
PAGE 14
LT1336 Applications Information switch turns back on. However, I2R losses will occur under these conditions due to the recirculating currents. V  Switch On=  OUT  (Total Period)  HV   HV–VOUT  Switch Off=  (Total Period)  HV  Note that for HV > 2VOUT, the switch is off longer than it is on, making the diode losses more significant than the switch.
PAGE 15
LT1336 Applications Information current can raise the voltage of the high voltage rail. This can be avoided by placing a discharge resistor between HV supply and ground to divert the return current to ground as shown in Figure 5. For a high voltage rail of 40V, a 26k resistor or smaller should be used, since the top driver will return about 1.5mA. The motor speed in these examples can be controlled by switching the drivers with pulse width modulated square waves.
PAGE 16
LT1336 Typical Applications 100µF 10k + IN 150k 12V 0.0033µF 1k + 60V MAX 10µF 1N4148 5V 0.1µF 1000µF 0.1µF 1 1k 1 8 1 8 2 2 7 2 7 3 6 3 6 4 5 4 5 5 LT1015 3 100k 1k 4 TC4428 6 1k 1 2 + 1µF 3 0.1µF LT1016 4 8 7 7 8 + 5 10k + 47µF 200k 47µF 10k 95k 2 13 3 12 4 LT1058 10 6 9 7 8 INTOP BOOST INBOTTOM UVOUT TGATEDR TGATEFB SGND TSOURCE PGND PV + BGATEFB BGATEDR + 15 14 13 12 IRFZ44 0.
PAGE 17
LT1336 Package Description N Package 16-Lead PDIP (Narrow .300 Inch) (Reference LTC DWG # 05-08-1510) .770* (19.558) MAX 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 .255 ± .015* (6.477 ± 0.381) .300 – .325 (7.620 – 8.255) .008 – .015 (0.203 – 0.381) ( +.035 .325 –.015 +0.889 8.255 –0.381 NOTE: 1. DIMENSIONS ARE ) .130 ± .005 (3.302 ± 0.127) .045 – .065 (1.143 – 1.651) .020 (0.508) MIN .065 (1.651) TYP .120 (3.048) MIN .100 (2.
PAGE 18
LT1336 Package Description S Package 16-Lead Plastic Small Outline (Narrow .150 Inch) (Reference LTC DWG # 05-08-1610) .386 – .394 (9.804 – 10.008) NOTE 3 .045 ±.005 .050 BSC 16 N .245 MIN 14 13 12 11 10 9 N .160 ±.005 .150 – .157 (3.810 – 3.988) NOTE 3 .228 – .244 (5.791 – 6.197) 1 .030 ±.005 TYP 15 2 3 N/2 N/2 RECOMMENDED SOLDER PAD LAYOUT .010 – .020 × 45° (0.254 – 0.508) .008 – .010 (0.203 – 0.254) 1 2 3 4 5 .053 – .069 (1.346 – 1.752) NOTE: 1. DIMENSIONS IN .014 – .
PAGE 19
LT1336 Revision History REV DATE DESCRIPTION PAGE NUMBER A 10/10 Change to Undervoltage Start-Up Threshold and Undervoltage Shutdown Threshold max limits in Electrical Characteristics section. 3 Updated Notes in Electrical Characteristics section. 4 Updated Related Parts. 20 1336fa Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use.
PAGE 20
LT1336 Typical Application 2.2µF 1µF + 2k + 10k 18k 6800pF * HURRICANE LAB HL-KM147U ** DALE TYPE LVR-3 ULTRONIX RCS01 100pF 0.1µF 25k 500k 18k 1 16 2 15 3 14 4 13 LT1846 5 10µF 2 1N4148 3 1k 4 5 6 11 6 7 10 8 9 1N4148 7 5k Q1 10k 1k 2200µF EA LOW ESR LT1336 1 12 4700pF 12V 1N4148 + 8 ISENSE SWITCH SV + SWGND INTOP INBOTTOM UVOUT SGND PGND BGATEFB BOOST TGATEDR TGATEFB TSOURCE 16 15 40V + 14 13 12 IRFZ34 0.