Datasheet

ManualsBrandsLINEAR TECHNOLOGY ManualsPMICsPMIC - OR controller, electrical elements n-channel MSOP 12 EP Diode bridge

LT4320/LT4320-1

4320fb

For more information www.linear.com/LT4320

Features Description

Ideal Diode Bridge

Controller

The LT

4320/LT4320-1 are ideal diode bridge controllers

that drive four N-channel MOSFETs, supporting voltage

rectification from DC to 600Hz typical. By maximizing

available voltage and reducing power dissipation (see

thermograph comparison below), the ideal diode bridge

simplifies power supply design and reduces power supply

cost, especially in low voltage applications.

An ideal diode bridge also eliminates thermal design

problems, costly heat sinks, and greatly reduces PC board

area. The LT4320’s internal charge pump supports an all-

NMOS design, which eliminates larger and more costly

PMOS switches. If the power source fails or is shorted, a

fast turn-off minimizes reverse current transients.

The LT4320 is designed for DC to 60Hz typical voltage

rectification, while the LT4320-1 is designed for DC to

600Hz typical voltage rectification. Higher frequencies of

operation are possible depending on MOSFET size and

operating load current.

applications

Maximizes Power Efficiency

Eliminates Thermal Design Problems

DC to 600Hz

9V to 72V Operating Voltage Range

= 1.5mA (Typical)

Maximizes Available Voltage

Available in 8-Lead (3mm × 3mm) DFN, 12-Lead

MSOP and 8-Lead PDIP Packages

Security Cameras

Terrestrial or Airborne Power Distribution Systems

Power-over-Ethernet Powered Device with a

Secondary Input

Polarity-Agnostic Power Input

Diode Bridge Replacement

L, LT , LT C , LT M , Linear Technology and the Linear logo are registered trademarks of Linear

Technology Corporation. All other trademarks are the property of their respective owners.

Patent pending.

–

TG1

IN1

LT4320

BG2

IN2

BG1

TG2

OUTN

OUTP

4320 TA01a

OUTPUT

9V TO 72V

INPUT

DC TO 600Hz (TYP)

Thermograph of Passive Diode Bridge

Thermograph of LT4320

Driving Four MOSFETs

SBM1040 (×4)

4320 TA01b

typical application

Temperature Rise

CURRENT

MOSFET

2.5mΩ

DIODE

SBM

1040

2A 0.6°C 15°C

4A 3.5°C 32°C

6A 6.7°C 49°C

8A 11°C 66°C

10A 16°C 84°C

DC Input, On Same PCB

LT4320+2.5mΩ FET (×4)

CONDITIONS: 24V AC

, 9.75A DC LOAD ON SAME PCB

4320 TA01c

Summary of content (14 pages)

PAGE 1
LT4320/LT4320-1 Ideal Diode Bridge Controller Description Features n n n n n n n Maximizes Power Efficiency Eliminates Thermal Design Problems DC to 600Hz 9V to 72V Operating Voltage Range IQ = 1.5mA (Typical) Maximizes Available Voltage Available in 8-Lead (3mm × 3mm) DFN, 12-Lead MSOP and 8-Lead PDIP Packages The LT®4320/LT4320-1 are ideal diode bridge controllers that drive four N-channel MOSFETs, supporting voltage rectification from DC to 600Hz typical.
PAGE 2
LT4320/LT4320-1 Absolute Maximum Ratings (Notes 1, 2) Supply Voltages IN1, IN2..................................................... –3V to 80V OUTP...................................................... –0.3V to 80V Output Voltages (Note 3) BG1, BG2, TG1, TG2................................ –0.3V to 80V TG1-IN1, TG2-IN2.....................................–0.3V to 12V Operating Junction Temperature Range LT4320I.................................................–40°C to 85°C LT4320H.........................
PAGE 3
LT4320/LT4320-1 Electrical Characteristics The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. (Note 2) SYMBOL PARAMETER CONDITIONS OUTP Voltage Range MIN l 9 OUTP Undervoltage Lockout (UVLO) Threshold INn = OUTP, Other IN = 0V l 6.2 VINT INn Turn-On/Off Threshold OUTP = 9V, Other IN = 0V l 1.
PAGE 4
LT4320/LT4320-1 Typical Performance Characteristics IINn and IOUTP vs OUTP OTHER IN = 0V OUTP 800 IN1 AND IN2 FLOATING 400 600 INn 0 20 40 INn = OUTP (V) 60 0 80 0 20 40 OUTP (V) 60 VBGATE vs OUTP 21 25 4320 G03 TGn Pull-Down Strength to INn 5 INn = OUTP + 100mV OTHER IN = 0V 900 800 INn = OUTP – 250mV OTHER IN = 0V 4 700 9 8 600 ITGSn (mA) ITGn (µA) VBGATE (V) 17 13 9 OUTP (V) TGn Pull-Up Strength 1000 10 500 400 3 2 300 200 7 OTHER IN = 0V 9 13 17 OUTP (V) 21 0
PAGE 5
LT4320/LT4320-1 Pin Functions (DFN, PDIP/MSOP) IN2 (Pin 1/Pin 1): Bridge Rectifier Input. IN2 connects to the external NMOS transistors MTG2 source, MBG1 drain and the power input. OUTP (Pin 6/Pin 9): OUTP is the rectified positive output voltage that powers the LT4320 and connects to the drains of MTG1 and MTG2. TG2 (Pin 2/Pin 2): Topside Gate Driver Output. TG2 pin drives MTG2 gate. TG1 (Pin 7/Pin 11): Topside Gate Driver Output. TG1 pin drives MTG1 gate.
PAGE 6
LT4320/LT4320-1 Operation Electronic systems that receive power from an AC power source or a DC polarity-agnostic power source often employ a 4-diode rectifier. The traditional diode bridge comes with an efficiency loss due to the voltage drop generated across two conducting diodes. The voltage drop reduces the available supply voltage and dissipates significant power especially in low voltage applications.
PAGE 7
LT4320/LT4320-1 Applications Information MOSFET Selection A good starting point is to reduce the voltage drop of the ideal bridge to 30mV per MOSFET with the LT4320 (50mV per MOSFET with the LT4320-1).
PAGE 8
LT4320/LT4320-1 Typical Applications B360B 4 COMPACT FETs* CONDITION: 13VDCIN, 3A LOAD ON SAME PCB *19mΩ, 60V EACH FET Figure 3. Thermograph: B360B vs LT4320 +4 Compact FETs 4320fb 8 For more information www.linear.
PAGE 9
LT4320/LT4320-1 Typical Applications Figure 4. Demonstration Circuit 1902A Used in Figure 3 Thermograph 4320fb For more information www.linear.
PAGE 10
LT4320/LT4320-1 Package Description Please refer to http://www.linear.com/designtools/packaging/ for the most recent package drawings. DD Package 8-Lead Plastic DFN (3mm × 3mm) (Reference LTC DWG # 05-08-1698 Rev C) 0.70 ±0.05 3.5 ±0.05 1.65 ±0.05 2.10 ±0.05 (2 SIDES) PACKAGE OUTLINE 0.25 ±0.05 0.50 BSC 2.38 ±0.05 RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS APPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED PIN 1 TOP MARK (NOTE 6) 0.200 REF 3.00 ±0.10 (4 SIDES) R = 0.125 TYP 5 0.40 ±0.10 8 1.
PAGE 11
LT4320/LT4320-1 Package Description Please refer to http://www.linear.com/designtools/packaging/ for the most recent package drawings. MSE Package 12-Lead Plastic MSOP, Exposed Die Pad (Reference LTC DWG # 05-08-1666 Rev G) BOTTOM VIEW OF EXPOSED PAD OPTION 2.845 ±0.102 (.112 ±.004) 5.10 (.201) MIN 2.845 ±0.102 (.112 ±.004) 0.889 ±0.127 (.035 ±.005) 6 1 1.651 ±0.102 (.065 ±.004) 1.651 ±0.102 3.20 – 3.45 (.065 ±.004) (.126 – .136) 12 0.65 0.42 ±0.038 (.0256) (.0165 ±.
PAGE 12
LT4320/LT4320-1 Package Description Please refer to http://www.linear.com/designtools/packaging/ for the most recent package drawings. N Package 8-Lead PDIP (Narrow .300 Inch) (Reference LTC DWG # 05-08-1510 Rev I) .400* (10.160) MAX 8 7 6 5 1 2 3 4 .255 ±.015* (6.477 ±0.381) .300 – .325 (7.620 – 8.255) .008 – .015 (0.203 – 0.381) ( +.035 .325 –.015 8.255 +0.889 –0.381 ) .045 – .065 (1.143 – 1.651) .065 (1.651) TYP .100 (2.54) BSC .130 ±.005 (3.302 ±0.127) .120 (3.048) .020 MIN (0.
PAGE 13
LT4320/LT4320-1 Revision History REV DATE DESCRIPTION A 11/13 Clarified that input frequency ranges use typical numbers (60Hz, 600Hz) 1, 6 Added PDIP package 2, 12 B 2/14 PAGE NUMBER Reduced MOSFET drop to 30mV from 70mV in “MOSFET Selection” and “Design Example” sections 7 Provided additional guidance in “Other Considerations in MOSFET Selection” section 7 Updated MSE package drawing 10 Added H- and MP-grade information 2 4320fb Information furnished by Linear Technology Corporation is
PAGE 14
LT4320/LT4320-1 Typical Application MTG1 ~ + MTG2 DIODE BRIDGE LT4320 IDEAL BRIDGE TG2 IN1 INPUT OUTP 1µF LT4320 IN2 MTG1,MTG2 MBG1, MBG2 TG1 + C1 TO LOAD BSZ110N06NS3 OUTN BG2 BG1 BSC031N06NS3 PSMN040-100MSE OPERATING VOLTAGE LOAD CURRENT C1 (MIN) POWER LOSS POWER LOSS 55V DC 3.5A 10µF 0.22W 4.2W 24V AC 1.5A 560µF 0.13W 1.9W 55V DC 30A 10µF 4.5W 36W 24V AC 10A 3.3mF 1.6W 12W 72V DC 2A 10µF 0.24W 2.