Datasheet

LT8619/LT8619-5
4
Rev A
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ELECTRICAL CHARACTERISTICS
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. V
EN/UV
= 2V unless otherwise noted (Notes 2, 3)
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: All currents into device pins are positive; all currents out of device
pins are negative. All Voltages are referenced to ground unless otherwise
specified.
Note 3: The LT8619 is tested under pulse load conditions such that
T
J
≈ T
A
. The LT8619E is guaranteed to meet performance specifications
from 0°C to 125°C junction temperature. Specifications over the –40°C
to 125°C operating junction temperature range are assured by design,
characterization, and correlation with statistical process controls. The
LT8619I is guaranteed over the full –40°C to 125°C operating junction
temperature range. High junction temperatures degrade operating
lifetimes. Operating lifetime is derated at junction temperatures greater
than 125°C.
Note 4: This IC includes overtemperature protection that is intended to
protect the device during overload conditions. Junction temperature will
exceed 150°C when overtemperature protection is active. Continuous
operation above the specified maximum operating junction temperature
will reduce lifetime.
PARAMETER CONDITIONS MIN TYP MAX UNITS
Switch, Logic and Power Good
Top Switch On-Resistance I
LOAD
= 0.1A 0.45 Ω
Bottom Switch On-Resistance I
LOAD
= 0.1A 0.22 Ω
EN/UV Power-On Threshold EN/UV Rising
l
0.94 1.0 1.1 V
EN/UV Power-On Hysteresis 40 mV
EN/UV Shutdown Threshold EN/UV Falling
l
0.34 0.56 0.92 V
EN/UV Pin Current V
EN/UV
= 2V –100 100 nA
Overvoltage Threshold V
FB
Rising Wrt. Regulated V
FB
3.75 %
Positive Power Good Threshold V
FB
Rising Wrt. Regulated V
FB
l
5 7.5 10 %
Negative Power Good Threshold V
FB
Falling Wrt. Regulated V
FB
l
–5 –7.5 –10 %
Positive Power Good Delay V
FB
= 0.8V ↑ 0.9V to PG Low
V
FB
= 0.9V ↓ 0.8V to PG High
60
35
µs
µs
Negative Power Good Delay V
FB
= 0.8V ↓ 0.7V to PG Low
V
FB
= 0.7V ↑ 0.8V to PG High
60
35
µs
µs
PG Leakage V
PG
= 3.3V, Power Good ±100 nA
PG V
OL
I
PG
= 100µA
l
0.01 0.3 V
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