Datasheet

LTC3114-1
4
Rev. C
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ELECTRICAL CHARACTERISTICS
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3114-1 is tested under pulsed load conditions such that
T
J
≈T
A
. The LTC3114E-1 is guaranteed to meet performance specifications
from 0°C to 85°C junction temperature. Specifications over the –40°C
to 125°C operating junction temperature range are assured by design,
characterization and correlation with statistical process controls. The
LTC3114I-1 specifications are guaranteed over the –40°C to 125°C
operating junction temperature range. The LTC3114H-1 specifications are
guaranteed over the –40°C to 150°C operating junction temperature range.
The LTC3114MP-1 specifications are guaranteed over the –55°C to 150°C
operating junction temperature range. High junction temperatures degrade
operating lifetime; operating lifetime is derated for junction temperatures
greater than 125°C. The maximum ambient temperature consistent with
these specifications is determined by specific operating conditions in
conjunction with board layout, the rated package thermal resistance and
other environmental factors.
The junction temperature (T
J
in degrees Celsius) is calculated from the
ambient temperature (T
A
in degrees Celsius) and the power dissipation
(P
D
in Watts) according to the following formula:
T
J
= T
A
+ (P
D
• θ
JA
)
where θ
JA
is the thermal impedance of the package.
The l denotes the specifications which apply over the specified operating
junction temperature range, otherwise specifications are at T
A
= 25°C (Note 2). V
IN
= 24V, V
OUT
= 5V, unless otherwise noted.
Note 3: Current measurements are performed when the LTC3114-1 is
not switching. The current limit values measured in operation will be
somewhat higher due to the propagation delay of the comparators. The
LTC3114-1 is tested in a proprietary non-switching test mode.
Note 4: This IC includes overtemperature protection that is intended to
protect the device during momentary overload conditions. The maximum
rated junction temperature will be exceeded when this protection is active.
Continuous operation above the specified absolute maximum operating
junction temperature may impair device reliability or permanently damage
the device.
Note 5: Operating output voltage can be programmed as low as 1.0V
nominal if the accurate programmable output current limit feature is not
required.
Note 6: Connecting LDO/PLDO to the regulated 5V output (bootstrapping),
reduces quiescent current substantially. Typical no-load quiescent current
for 12V V
IN
to 5V V
OUT
is 30µA, if boostrapped.
N-Channel Switch Resistance Switch A (from PV
IN
to SW1)
Switch B (from SW1 to PGND)
Switch C (from SW2 to PGND)
Switch D (from PV
OUT
to SW2)
250
250
250
250
mΩ
mΩ
mΩ
mΩ
N-Channel Switch Leakage 0.1 10 µA
LDO Output Voltage I
LDO
= 10mA
l
4.2 4.4 4.6 V
LDO Load Regulation I
LDO
= 1mA to 10mA 0.8 %
LDO Line Regulation I
LDO
= 1mA, V
IN
= 10V to 40V 0.2 %
LDO Current Limit V
LDO
= 2.5V 40 65 mA
Soft-Start Time 2 ms
SW1 and SW2 Forced Low Time 100 ns
MODE Pin Logic Threshold H = PWM Mode, L = Burst Mode Operation
l
0.5 0.9 1.3 V
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