Datasheet

LTC3588-2
3
35882fa
elecTrical characTerisTics
The l denotes the specifications which apply over the full operating
junction temperature range, otherwise specifications are for T
A
= 25°C (Note 2). V
IN
= 18V unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
IN
Input Voltage Range Low Impedance Source on V
IN
l
18.0 V
I
Q
V
IN
Quiescent Current
UVLO
Buck Enabled, Sleeping
Buck Enabled, Not Sleeping
V
IN
= 12V, Not PGOOD
V
IN
= 18V
I
SW
= 0A (Note 4)
830
1500
150
1400
2500
250
nA
nA
µA
V
UVLO
V
IN
Undervoltage Lockout Threshold V
IN
Rising
l
16.0 17.0 V
V
IN
Falling
l
13.0 14.0 V
V
SHUNT
V
IN
Shunt Regulator Voltage I
VIN
= 1mA 18.8 20.0 21.2 V
I
SHUNT
Maximum Protective Shunt Current 1ms Duration 25 mA
Internal Bridge Rectifier Loss
(|V
PZ1
– V
PZ2
| – V
IN
)
I
BRIDGE
= 10µA 350 400 450 mV
Internal Bridge Rectifier Reverse
Leakage Current
V
REVERSE
= 18V 20 nA
Internal Bridge Rectifier Reverse
Breakdown Voltage
I
REVERSE
= 1µA V
SHUNT
30 V
V
OUT
Regulated Output Voltage 3.45V Output Selected
Sleep Threshold
Wake-Up Threshold
4.1V Output Selected
Sleep Threshold
Wake-Up Threshold
4.5V Output Selected
Sleep Threshold
Wake-Up Threshold
5.0V Output Selected
Sleep Threshold
Wake-Up Threshold
l
l
l
l
l
l
l
l
3.346
3.979
4.354
4.825
3.466
3.434
4.116
4.084
4.516
4.484
5.016
4.984
3.554
4.221
4.646
5.175
V
V
V
V
V
V
V
V
PGOOD Falling Threshold As a Percentage of the Selected V
OUT
83 92 %
I
VOUT
Output Quiescent Current V
OUT
= 5.0V 125 250 nA
I
PEAK
Buck Peak Switch Current 200 260 350 mA
I
BUCK
Available Buck Output Current 100 mA
R
P
Buck PMOS Switch On-Resistance 1.1 Ω
R
N
Buck NMOS Switch On-Resistance 1.3 Ω
Max Buck Duty Cycle
l
100 %
V
IH(D0, D1)
D0/D1 Input High Voltage
l
1.2 V
V
IL(D0, D1)
D0/D1 Input Low Voltage
l
0.4 V
I
IH(D0, D1)
D0/D1 Input High Current 10 nA
I
IL(D0, D1)
D0/D1 Input Low Current 10 nA
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3588E-2 is tested under pulsed load conditions such
that T
J
≈ T
A
. The LTC3588E-2 is guaranteed to meet specifications
from 0°C to 85°C junction temperature. Specifications over the –40°C
to 125°C operating junction temperature range are assured by design,
characterization and correlation with statistical process controls. The
LTC3588I-2 is guaranteed over the –40°C to 125°C operating junction
temperature range. Note that the maximum ambient temperature
consistent with these specifications is determined by specific operating
conditions in conjunction with board layout, the rated package thermal
impedance and other environmental factors.
Note 3: The junction temperature (T
J
, in °C) is calculated from the ambient
temperature (T
A
, in °C) and power dissipation (P
D
, in Watts) according
to the formula: T
J
= T
A
+ (P
D
• θ
JA
), where θ
JA
(in °C/W) is the package
thermal impedance.
Note 4: Dynamic supply current is higher due to gate charge being
delivered at the switching frequency.