Datasheet

LTC4442/LTC4442-1
3
4442fb
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC4442I/LTC4442I-1 are guaranteed to meet specifi cations
from –40°C to 85°C. The LTC4442E/LTC4442E-1 are guaranteed to meet
specifi cations from 0°C to 85°C with specifi cations over the –40°C to
85°C operating temperature range assured by design, characterization and
correlation with statistical process controls.
ELECTRICAL CHARACTERISTICS
The ● denotes the specifi cations which apply over the full operating
temperature range, otherwise specifi cations are at T
A
= 25°C. V
CC
= V
BOOST
= 7V, V
TS
= GND = 0V, V
LOGIC
= 5V, unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
UVLO Undervoltage Lockout Threshold V
CC
Rising (LTC4442)
V
CC
Falling (LTC4442)
Hysteresis (LTC4442)
●
●
2.75
2.60
3.20
3.04
160
3.65
3.50
V
V
mV
V
CC
Rising (LTC4442-1)
V
CC
Falling (LTC4442-1)
Hysteresis (LTC4442-1)
●
●
5.6
4.7
6.2
5.3
850
6.7
5.8
V
V
mV
Bootstrapped Supply (BOOST – TS)
I
BOOST
DC Supply Current IN = Floating 325 400 µA
Input Signal (IN)
V
IH(TG)
TG Turn-On Input Threshold V
LOGIC
≥ 5V, IN Rising
V
LOGIC
= 3.3V, IN Rising
●
●
3.0
1.9
3.5
2.2
4.0
2.6
V
V
V
IL(TG)
TG Turn-Off Input Threshold V
LOGIC
≥ 5V, IN Falling
V
LOGIC
= 3.3V, IN Falling
3.25
2.09
V
V
V
IH(BG)
BG Turn-On Input Threshold V
LOGIC
≥ 5V, IN Falling
V
LOGIC
= 3.3V, IN Falling
●
●
0.8
0.8
1.25
1.10
1.6
1.4
V
V
V
IL(BG)
BG Turn-Off Input Threshold V
LOGIC
≥ 5V, IN Rising
V
LOGIC
= 3.3V, IN Rising
1.50
1.21
V
V
I
IN(SD)
Maximum Current Into or Out of IN in
Shutdown Mode
V
LOGIC
≥ 5V, IN Floating
V
LOGIC
= 3.3V, IN Floating
200
100
300
150
µA
µA
High Side Gate Driver Output (TG)
V
OH(TG)
TG High Output Voltage I
TG
= –10mA, V
OH(TG)
= V
BOOST
– V
TG
0.7 V
V
OL(TG)
TG Low Output Voltage I
TG
= 100mA, V
OL(TG)
= V
TG
– V
TS
100 mV
I
PU(TG)
TG Peak Pull-Up Current
●
1.5 2.4 A
I
PD(TG)
TG Peak Pull-Down Current
●
1.5 2.4 A
Low Side Gate Driver Output (BG)
V
OH(BG)
BG High Output Voltage I
BG
= –10mA, V
OH(BG)
= V
CC
– V
BG
0.7 V
V
OL(BG)
BG Low Output Voltage I
BG
= 100mA 100 mV
I
PU(BG)
BG Peak Pull-Up Current
●
1.4 2.4 A
I
PD(BG)
BG Peak Pull-Down Current
●
3.5 5.0 A
Switching Time
t
PLH(TG)
BG Low to TG High Propagation Delay 20 ns
t
PHL(TG)
IN Low to TG Low Propagation Delay 12 ns
t
PLH(BG)
TG Low to BG High Propagation Delay 20 ns
t
PHL(BG)
IN High to BG Low Propagation Delay 12 ns
t
r(TG)
TG Output Rise Time 10% – 90%, C
L
= 3nF 12 ns
t
f(TG)
TG Output Fall Time 10% – 90%, C
L
= 3nF 8 ns
t
r(BG)
BG Output Rise Time 10% – 90%, C
L
= 3nF 12 ns
t
r(BG)
BG Output Fall Time 10% – 90%, C
L
= 3nF 5 ns
T
J
is calculated from the ambient temperature T
A
and power dissipation P
D
according to the following formula:
T
J
= T
A
+ (PD • θ
JA
°C/W)
Note 3: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature will exceed 125°C when overtemperature protection is active.
Continuous operation above the specifi ed maximum operating junction
temperature may impair device reliability.