Datasheet

Electrical Specifications
9-6 Intel
®
E8870 Scalable Node Controller (SNC) Datasheet
9.5.2 DC Specifications
9.5.3 AC Specifications
For complete RAMBUS data sheet, including the AC specifications, timing relationships, etc.,
please refer to the RAMBUS website.
Table 9-8. RSL Data Group, DC Parameters
(a, b)
a. All specifications are at the pin of the package.
b. Applies to RSL input, output and I/O buffers.
Symbol Parameter Min Max Unit Notes
Vil Input Low Voltage Vref,r – 0.5 Vref,r –
0.175
V
c
c. Vref here refers to “Typical” value of the RAMBUS reference voltage. See Table 9-7 for Vref specification.
Vih Input High Voltage Vref,r +
0.175
Vref,r + 0.5 V
c
V
DIS
Data Voltage Swing 0.54 1.10 V
A
DI
Data Input Asymmetry about V
REF
–15% 15% V
DIS
Iol Output Low Current 30 mA
d
d. Current per I/O.
Ili Input Leakage Current 5 µA
Ilo Output Leakage Current 5 µA
Table 9-9. RSL Clocks, DC Parameters
(a, b)
a. VCIS applies to both Clock and Clock#.
b. Parameters apply to RSL input, output, and I/O buffers.
Symbol Parameter Min. Max Unit Notes
V
CIS,CTM
Clock Input Voltage Swing on CTM
Pin
0.25 – V/ns
V
CIS,CFM
Clock Input Voltage Swing on CFM
Pin
0.25 – V/ns
V
X
Clock Differential Crossing-point
Voltage
1.30 1.80 V
V
CM
Clock Input Common-mode Voltage 1.40 1.70 V
Table 9-10. RAMBUS “CMOS 1.8 I/O” DC Parameters
(a, b)
a. All specifications are at the pin of the package.
b. Parameters apply to “CMOS 1.8” input, output, and I/O buffers.
Symbol Parameter Min Max Unit Notes
Vil Input Low Voltage –0.3 1/
2(VCCRIO)
–0.25
V
Vih Input High Voltage 1/2
(VCCRIO) +
0.25
VCCRAC
c
+
0.30
c. Refer to Intel
®
E8870DH DDR Memory Hub (DMH) Datasheet.
V
Ili Input Leakage Current 20 µA
Ilo Output Leakage Current 20 µA