Datasheet

71M6513/71M6513H
3-Phase Energy Meter IC
DATA SHEET
AUGUST 2011
Page: 96 of 104 © 2005-2011 Teridian Semiconductor Corporation
A Maxim Integrated Products Brand
COMPARATORS
PARAMETER
CONDITION
MIN
TYP
MAX
UNIT
Offset Voltage
V1-VBIAS
V2-VBIAS
V3-VBIAS
-20
-20
-20
15
15
15
mV
mV
mV
Hysteresis Current
V1
V2
V3
Vin = VBIAS - 100mV
0.8
0.8
0.8
1.2
1.2
1.2
μA
μA
μA
Response Time
V1
V2
V3
+100mV overdrive
2
0.5
0.5
15
50
50
μs
μs
μs
WD Disable Threshold (V1-V3P3A)
-400
-10
mV
RAM AND FLASH MEMORY
PARAMETER
CONDITION
MIN
TYP
MAX
UNIT
CE RAM wait states
CKMPU = 4.9MHz
5
Cycles
CKMPU = 1.25MHz
2
Cycles
Flash write cycles
-40°C to +85°C
20,000
Cycles
Flash data retention
25°C
100
Years
Flash data retention
85°C
10
Years
Flash byte writes between page or mass
erase operations
2 Cycles
FLASH MEMORY TIMING
PARAMETER
CONDITION
MIN
TYP
MAX
UNIT
Write Time per Byte
42
µs
Page Erase (512 bytes)
20
ms
Mass Erase
200
ms
EEPROM INTERFACE
PARAMETER
CONDITION
MIN
TYP
MAX
UNIT
Write Clock frequency
CKMPU=4.9MHz, Using
interrupts
78 kHz
CKMPU=4.9MHz, “bit-
banging” DIO4/5
150 kHz