Datasheet

71M6515H
Energy Meter IC
DATA SHEET
JULY 2011
Page: 8 of 60 © 2005−2011 Teridian Semiconductor Corporation 1.6
A Maxim Integrated Products Brand
Temperature Coefficient of Input
Impedance
Vin=65Hz 1.7 Ω/°C
LSB size
355
nV/LSB
Digital Full Scale
+884736
LSB
ADC Gain Error vs.
%Power Supply Variation
3.3/33100
/35710
6
APV
VnVNout
INPK
∆
∆
Vin=200mV pk, 65Hz
V3P3A=3.0V, 3.6V
50
PPM/
%
Input Offset (Vin-V3P3A)
-10
+10
mV
1
Guaranteed by design; not production tested.
RECOMMENDED EXTERNAL COMPONENTS
NAME
FROM
TO
FUNCTION
VALUE
UNIT
C1
V3P3A
AGND
Bypass capacitor for 3.3V supply
≥0.1±20%
µF
C2
V3P3D
DGND
Bypass capacitor for 3.3V supply
≥0.1±20%
µF
XTAL XIN XOUT
32.768kHz crystal – electrically similar to
ECS .327-12.5-17X or Vishay XT26T, load
capacitance 12.5pF
32.768 kHz
CXS
XIN
AGND
Load capacitor for crystal (depends on crystal
specs and board parasitics).
27
±
10%
pF
CXL
XOUT
AGND
27
±
10%
pF
C2P5
V2P5
DGND
Bypass capacitor for V2P5
≥0.1±20%
µF
FOOTNOTES:
1 This spec is guaranteed, has been verified in production samples, but is not measured in production.
2 This spec is guaranteed, has been verified in production samples, but is measured in production only at DC.
3 This spec is measured in production at the limits of the specified operating temperature.
4 This spec defines a nominal relationship rather than a measured parameter. Correct circuit operation is verified with other specs that use
this nominal relationship as a reference