Datasheet

71M6533/G/H and 71M6534/H Data Sheet FDS_6533_6534_004
116 Rev 2
6.5 Timing Specifications
6.5.1 Flash Memory
Table 86: Flash Memory Timing Specifications
Parameter Condition Min Typ Max Unit
Flash Read Pulse Width
V3P3A = V3P3SYS = 0
(BROWNOUT Mode)
30
100
ns
Flash write cycles
-40°C to +85°C
20,000
Cycles
Flash data retention
25°C
100
Years
Flash data retention
85°C
10
Years
Flash byte writes between page or
mass erase operations
2 Cycles
Write Time per Byte
42
µs
Page Erase (1024 bytes)
20
ms
Mass Erase
200
ms
6.5.2 EEPROM Interface
Table 87: EEPROM Interface Timing
Parameter
Condition
Min
Typ
Max
Unit
Write Clock frequency (I
2
C)
CKMPU = 4.9 MHz,
Using interrupts
78 kHz
CKMPU = 4.9 MHz,
bit-banging DIO4/5
150 kHz
Write Clock frequency (3-wire)
CKMPU=4.9 MHz
500
kHz
6.5.3 RESET
Table 88: RESET Timing
Parameter Condition Min Typ Max Unit
Reset pulse width
5
µs
Reset pulse fall time
1
1
µs
1
Guaranteed by design; not production tested.
6.5.4 RTC
Table 89: RTC Range for Date
Parameter
Condition
Min
Typ
Max
Unit
Range for date
2000
-
2255
year