Datasheet

DS_6612_001 78M6612 Data Sheet
Rev 2 35
4.5 Timing Specifications
4.5.1 RAM and Flash Memory
Table 22: RAM and Flash Memory Specifications
Parameter Condition Min Typ Max Unit
CE DRAM wait states
CKMPU = 4.9152 MHz
5
Cycles
CKMPU = 1.25 MHz
2
Cycles
CKMPU = 614 kHz
1
Cycles
Flash Read Pulse Width
V3P3A=V3P3SYS=0
BROWNOUT MODE
30 100 ns
Flash write cycles
-40 °C to +85 °C
20,000
Cycles
Flash data retention
25 °C
100
Years
Flash data retention
85 °C
10
Years
Flash byte writes between page or
mass erase operations
2 Cycles
4.5.2 Flash Memory Timing
Table 23: Flash Memory Timing Specifications
Parameter Condition Min Typ Max Unit
Write Time per Byte 42 µs
Page Erase (512 bytes) 20 ms
Mass Erase 200 ms
4.5.3 EEPROM Interface
Table 24: EEPROM Interface Timing
Parameter Condition Min Typ Max Unit
Write Clock frequency (I
2
C)
CKMPU=4.9152 MHz,
Using interrupts
78 kHz
CKMPU=4.9152 MHz,
“bit-banging” DIO4/5
150 kHz
Write Clock frequency (3-wire) CKMPU=4.9152 MHz 500 kHz
4.5.4 RESET and V1
Table 25: RESET and V1 Timing
Parameter Condition Min Typ Max Unit
Reset pulse fall time 1
µs
Reset pulse width 5
µs
V1 Response Time +100 mv overdrive 10 37 100
µs
4.5.5 RTC
Table 26: RTC Range
Parameter Condition Min Typ Max Unit
Range for date 2000 2255 year