Datasheet

1 of 8
FEATURES
Converts CMOS RAMs into Nonvolatile
Memories
Unconditionally Write Protects when V
CC
is
Out-of-Tolerance
Automatically Switches to Battery when
Power-Fail Occurs
Space-Saving 8-Pin PDIP or 16-Pin SO
Packages
Consumes <100nA of Battery Current
Tests Battery Condition on Power up
Provides for Redundant Batteries
Optional 5% or 10% Power-Fail Detection
Low Forward Voltage Drop on the V
CC
Switch
Optional Industrial (N) Temperature Range of
-40°C to +85°C
PIN ASSIGNMENT
PIN DESCRIPTION
V
CCO
- RAM Supply
V
BAT1
- + Battery 1
TOL - Power Supply Tolerance
GND - Ground
CE
- Chip Enable Input
CEO
- Chip Enable Output
V
BAT2
- + Battery 2
V
CCI
- + Supply
NC - No Connect
DESCRIPTION
The DS1210 Nonvolatile Controller Chip is a CMOS circuit which solves the application problem of
converting CMOS RAM into nonvolatile memory. Incoming power is monitored for an out-of-tolerance
condition. When such a condition is detected, chip enable is inhibited to accomplish write protection and
the battery is switched on to supply the RAM with uninterrupted power. Special circuitry uses a low-
leakage CMOS process which affords precise voltage detection at extremely low battery consumption.
The 8-pin DIP package keeps PC board real estate requirements to a minimum. By combining the
DS1210 Nonvolatile Controller Chip with a CMOS memory and batteries, nonvolatile RAM operation
can be achieved.
DS1210
Nonvolatile Controller Chip
VCCO
VBAT1
TOL
GND
1
4
VCCI
VBAT2
CEO
CE
8
7
6
5
DS1210 8-pin PDIP (300 mils)
NC
VCCO
NC
VBAT1
NC
TOL
NC
GND
NC
VCCI
NC
VBAT2
NC
CEO
NC
CE
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
DS1210S 16-pin SO (300 mils)
19-6294; Rev 6/12

Summary of content (8 pages)