Datasheet

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FEATURES
 10 years minimum data retention in the
absence of external power
 Data is automatically protected during power
loss
 Directly replaces 2k x 8 volatile static RAM
or EEPROM
 Unlimited write cycles
 Low-power CMOS
 JEDEC standard 24-pin DIP package
 Read and write access times of 100 ns
 Lithium energy source is electrically
disconnected to retain freshness until power
is applied for the first time
 Full ±10% V
CC
operating range (DS1220AD)
 Optional ±5% V
CC
operating range
(DS1220AB)
 Optional industrial temperature range of
-40°C to +85°C, designated IND
PIN ASSIGNMENT
24-Pin ENCAPSULATED PACKAGE
720-mil EXTENDED
PIN DESCRIPTION
A0-A10 - Address Inputs
DQ0-DQ7 - Data In/Data Out
CE
- Chip Enable
WE
- Write Enable
OE
- Output Enable
V
CC
- Power (+5V)
GND - Ground
DESCRIPTION
The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs
organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and
control circuitry which constantly monitors V
CC
for an out-of-tolerance condition. When such a condition
occurs, the lithium energy source is automatically switched on and write protection is unconditionally
enabled to prevent data corruption. The NV SRAMs can be used in place of existing 2k x 8 SRAMs
directly conforming to the popular bytewide 24-pin DIP standard. The devices also match the pinout of
the 2716 EPROM and the 2816 EEPROM, allowing direct substitution while enhancing performance.
There is no limit on the number of write cycles that can be executed and no additional support circuitry is
required for microprocessor interfacing.
DS1220AB/AD
16k Nonvolatile SRAM
19-5580; Rev 10/10
www.maxim-ic.com
14
VCC
WE
1
2
3
4
5
6
7
8
9
10
11
12
13
24
15
23
22
21
20
19
18
17
16
A7
A5
A3
A2
A1
A0
DQ0
DQ1
GND
DQ2
A6
A4
A8
A9
OE
A10
CE
DQ7
DQ6
DQ5
DQ3
DQ4