Datasheet

DS1314
5 of 12
ABSOLUTE MAXIMUM RATINGS
Voltage Range on Any Pin Relative to Ground -0.5V to +6.0V
Operating Temperature Range -40°C to +85°C
Storage Temperature Range -55°C to +125°C
Soldering Temperature (reflow, SO or TSSOP) +260°C
Lead Temperature (soldering, 10s) +300°C
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of
time may affect reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
PDIP
Junction-to-Ambient Thermal Resistance (θ
JA
).…………………...………………………....110°C/W
Junction-to-Case Thermal Resistance (θ
JC
)……………………………………………………40°C/W
8 SO
Junction-to-Ambient Thermal Resistance (θ
JA
).……………………………………………...132°C/W
Junction-to-Case Thermal Resistance (θ
JC
)……………………………………………………38°C/W
16 SO
Junction-to-Ambient Thermal Resistance (θ
JA
).…………………...………………………......71°C/W
Junction-to-Case Thermal Resistance (θ
JC
)……………………………………………………23°C/W
TSSOP
Junction-to-Ambient Thermal Resistance (θ
JA
).……………………………………………..73.8°C/W
Junction-to-Case Thermal Resistance (θ
JC
)……………………………………………………20°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board for the SMT packages. For detailed information on package thermal considerations, refer to
www.maxim-ic.com/thermal-
tutorial.
RECOMMENDED OPERATING CONDITIONS (-40°C to +85°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Supply Voltage TOL=GND
V
CCI
3.0
3.3
3.6
V
2
Supply Voltage TOL=V
CCO
V
CCI
2.7
3.0
3.3
V
2
Battery Supply Voltage
V
BAT
2.0
6.0
V
2
Logic 1 Input
V
IH
2.0
V
CCI
+0.3
V
2, 13
Logic 0 Input
V
IL
-0.3
+0.8
V
2, 13
DC ELECTRICAL CHARACTERISTICS (-40°C to +85°C; V
CCI
= ≥V
CCTP
)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Operating Current (TTL inputs)
I
CC1
50
200
µA
3
Operating Current (CMOS inputs)
I
CC2
30
100
µA
3, 6
RAM Supply Current
(V
CCO
≥ V
CCI
-0.2V)
I
CCO1
80
mA
4
RAM Supply Current
(V
CCO
≥ V
CCI
-0.3V)
I
CCO1
140
mA
5
V
CC
Trip Point (TOL=GND)
V
CCTP
2.8
2.9
3.0
V
2
V
CC
Trip Point (TOL=V
CCO
)
V
CCTP
2.5
2.6
2.7
V
2